onsemi Transistor 4 mA NPN 25 V 3-Pin SOT-23 MMBTH10LT1G

onsemi MMBTH10LT1G is a high-performance NPN bipolar transistor designed for various electronic applications requiring low to moderate currents and voltages, packaged in a compact 3-pin SOT-23 surface mount package.

This transistor supports a maximum DC collector current of 4 mA and a collector emitter voltage rating of 25 V, making it suitable for signal amplification and switching in low power circuits. The maximum power dissipation is 225 mW ensuring thermal stability during operation.

The device features a minimum current gain (hFE) of 50 with a transition frequency of 100 MHz, providing excellent performance in RF and high-frequency switching applications. It operates reliably across a wide temperature range from -55°C to 150°C, suitable for automotive and industrial environments.

The transistor has a single configuration in NPN polarity, with maximum collector base voltage of 30 V DC and emitter base voltage of 3 V, offering flexibility in circuit design. Its compact dimensions (3 mm length, 1.4 mm width, and 1.1 mm height) allow for space-saving PCB layouts with surface mount technology assembly.

Compact SOT-23 surface mount package. Maximum collector current of 4 mA. Collector emitter voltage of 25 V. Power dissipation rating of 225 mW. Operating temperature range: -55°C to 150°C. High transition frequency of 100 MHz.

Minimum DC current gain of 50. Single NPN transistor configuration. Pin count: 3 for easy integration. Manufactured in China following quality standards. This transistor is ideal for industrial, electronic semiconductor applications, RF circuits, signal amplification, and switching operations in commercial and laboratory devices.

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