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onsemi High Voltage NPN Transistor 5 A 400 V 3-Pin TO-220 FJP5555TU
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 30.34mm |
| Length | 10.67mm |
| Model | FJP5555TU |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 400V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 14V |
| Maximum Collector Base Voltage VCBO | 1050V |
| Maximum Power Dissipation Pd | 75W |
| Maximum DC Collector Current Idc | 5A |
| Transistor Configuration | Single |
Key Features
- The transistor configuration is single, ideal for a broad range of circuit application needs.
- Maximum power dissipation is rated at 75 W, ensuring efficient thermal handling.
- The device features a minimum DC current gain (hFE) of 10.
- Maximum collector-base voltage is 1050 V and emitter-base voltage is 14 V.
- Operating temperature range extends up to 150°C suitable for demanding industrial environments.
- Physical dimensions include length of 10.67 mm, width of 4.7 mm, and height of 30.34 mm.
- Package type TO-220 enables optimal assembly in power and other electronic applications.
Product Description
onsemi FJP5555TU is a high voltage NPN bipolar junction transistor designed for robust industrial and electronic circuit applications requiring reliable switching and amplification capabilities.
This transistor supports a maximum DC collector current of 5 A and can withstand collector-emitter voltages up to 400 V, making it ideal for high power electronics, power supplies, and motor control systems.
The TO-220 package delivers excellent thermal performance and allows for through-hole mounting, ensuring ease of installation and heat dissipation.
Featuring a minimum current gain of 10, it maintains efficient electrical performance across varied load conditions. The maximum power dissipation rating at 75 W enables this transistor to operate reliably under heavy load conditions.
Key electrical limits include a maximum collector-base voltage (VCBO) of 1050 V and emitter-base voltage (VEBO) of 14 V. With an operating temperature up to 150°C, the FJP5555TU can function in demanding automotive, industrial, and power electronics environments.
Physical dimensions of 10.67 mm length, 4.7 mm width, and 30.34 mm height facilitate compact and space-efficient circuit designs. The transistor is configured as a single NPN unit, suitable for discrete semiconductor applications.
TO-220 package ensures maximum thermal performance and mechanical reliability. Rated for 5 A collector current and 400 V collector-emitter voltage. Minimum gain of 10 to maintain efficient amplification. High power dissipation capability at 75 W supports robust operation.
Wide operating temperature range to 150°C enables use in harsh conditions. Physical size optimized for various PCB designs.
This transistor serves various industrial uses including power management in manufacturing, automation, HVAC control, and electronic component design. onsemi provides reliable semiconductor solutions that are integral to modern electronics.
EnvMart users can explore other Bipolar Transistors and semiconductor components within this category for comprehensive application needs.
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Frequently Asked Questions
The maximum collector-emitter voltage (Vceo) of the FJP5555TU is rated at 400 V.
The maximum power dissipation for this model is 75 W, allowing for efficient thermal handling during operation.
The minimum DC current gain (hFE) of the FJP5555TU is 10, ensuring efficient amplification across various load conditions.
The physical dimensions of the FJP5555TU are 10.67 mm in length, 4.7 mm in width, and 30.34 mm in height.
This transistor uses a TO-220 package type, which allows for optimal assembly in power and electronic applications.
The maximum operating temperature for the FJP5555TU is 150°C, making it suitable for demanding industrial environments.
The maximum DC collector current (Idc) for this transistor is rated at 5 A.
The maximum emitter-base voltage (VEBO) for the FJP5555TU is 14 V.
The FJP5555TU is configured as a single NPN transistor, suitable for discrete semiconductor applications.
This model is designed for through-hole mounting, facilitating easy installation and heat dissipation.
The FJP5555TU is suitable for various applications, including power management in manufacturing, automation, HVAC control, and electronic component design.
The maximum collector-base voltage (VCBO) of the FJP5555TU is 1050 V.
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