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DiodesZetex Small Signal 100 mA NPN Transistor 45 V 3-Pin SOT-23 BC847C-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BC847C-7-F
Width 2.5mm
Mount Type Surface
Series BC847C
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 420
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz

Key Features

  • Supports a maximum DC collector current of 100 mA.
  • Maximum collector emitter voltage rated at 45 V for robust applications.
  • Compact 3-pin surface mount SOT-23 package with dimensions 3mm length, 2.5mm width, and 1.1mm height.
  • High current gain with minimum DC current gain (hFE) of 420.
  • Approved automotive standard AEC-Q101 for vehicle electronics.
  • Maximum power dissipation of 300 mW for efficient thermal management.
  • Operating temperature range from -65°C to 150°C allows for diverse environment use.
  • Designed with high transition frequency of 300 MHz suitable for high-speed switching.

Product Description

DiodesZetex BC847C-7-F is a high-performance small signal NPN transistor designed for electronic circuits requiring reliable switching and amplification functions. The device supports a maximum collector current of 100 mA and collector emitter voltage up to 45 V, making it suitable for low power switching and signal processing applications.

The transistor comes in a compact and surface mount 3-pin SOT-23 package with dimensions measuring 3 mm in length, 2.5 mm width, and 1.1 mm height, allowing integration into space-constrained electronic designs including automotive, industrial, and consumer electronics.

This model features a high minimum DC current gain (hFE) of 420, providing strong amplification capabilities. It supports operation within a wide temperature range from -65°C to 150°C and complies with the AEC-Q101 automotive standard, ensuring reliability in demanding automotive environments.

The maximum power dissipation of 300 mW helps maintain thermal stability during operation, accompanied by a high transition frequency of 300 MHz for efficient high-frequency performance. The transistor configuration is single with an NPN polarity, commonly used in switching and amplification circuits.

Supports a maximum DC collector current of 100 mA. Maximum collector emitter voltage of 45 V ensures operational robustness. Complies with automotive standard AEC-Q101 for vehicle electronics reliability. Compact 3-pin SOT-23 package dimensions enable dense PCB integration.

Wide operating temperature range from -65°C to 150°C for versatile uses. High current gain with minimum DC gain of 420 for efficient amplification. Power dissipation rated at 300 mW maintains device thermal safety. High transition frequency of 300 MHz suitable for high-speed applications.

Single NPN transistor configuration for standard switching or amplification tasks. Manufactured in China, part of BC847C series from DiodesZetex.

This transistor is ideal for use in industrial, automotive, laboratory, and consumer electronics applications requiring dependable low power signal amplification and switching. Explore the DiodesZetex and Bipolar Transistors category for related components and advanced semiconductor products on EnvMart.

DiodesZetex Small Signal 100 mA NPN Transistor 45 V 3-Pin SOT-23 BC847C-7-F
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Frequently Asked Questions

The maximum DC collector current for this transistor is 100 mA.

It has a maximum collector-emitter voltage rating of 45 V.

The SOT-23 package has dimensions of 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The minimum DC current gain (hFE) for this model is 420.

It operates within a wide temperature range from -65°C to 150°C.

The maximum power dissipation is rated at 300 mW.

It complies with the AEC-Q101 automotive standard for vehicle electronics.

The maximum transition frequency is 300 MHz, suitable for high-speed applications.

This model uses a single NPN transistor configuration.

The maximum emitter-base voltage (VEBO) is 6 V.

The maximum collector-base voltage (VCBO) rating is 50 V.

This transistor is suitable for low power switching and signal processing applications in automotive, industrial, and consumer electronics.

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