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Vishay Silicon Junction Switching Diode Common Anode 250 mA 70 V 3-Pin SOT-23 BAW56-E3-08

Category Switching Diode Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 1.05mm
Length 3.1mm
Model BAW56-E3-08
Width 1.43mm
Mount Type Surface
Maximum Operating Temperature 150°C
Case DO-204AL, molded epoxy over glass body
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Polarity Color band denotes cathode end
Terminals Matte tin plated leads, solderable per
Pin Count 3
Maximum Power Dissipation Pd 350mW
Diode Configuration Common Anode
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 6ns
Maximum Forward Current If 250mA
Maximum Peak Reverse Repetitive Voltage Vrrm 70V

Key Features

  • Fast switching diode with 6 ns peak reverse recovery time for high efficiency operation.
  • Glass passivated junction with cavity-free design ensures reliability.
  • Maximum forward voltage of 1.25 V and power dissipation of 350 mW.
  • Suitable for surface mount applications with a small footprint of 3.1 mm length and 1.43 mm width.
  • Operating temperature range from -65°C to +150°C for versatile environments.
  • Matte tin plated leads solderable per industry standards for robust mounting.
  • Color band denotes cathode end for easy polarity identification.
  • Designed for high forward surge capability and low leakage current less than 0.2 μA.

Product Description

Vishay BAW56-E3-08 is a high reliability silicon junction switching diode configured with a common anode and optimized for fast switching applications. It features a compact 3-pin SOT-23 surface mount package that measures 3.1 mm in length and 1.43 mm in width, making it suitable for densely populated electronics assemblies.

This diode supports a maximum forward current of 250 mA and can withstand peak reverse repetitive voltages up to 70 V, with a maximum forward voltage drop of 1.25 V, ensuring efficient conduction. The device dissipates up to 350 mW power and exhibits a peak reverse recovery time of just 6 nanoseconds, enabling fast switching performance essential in power management and signal processing circuits.

The glass passivated junction is cavity-free, enhancing long-term reliability and providing excellent protection against environmental factors. Operating temperature ranges from -65°C to 150°C allows use in demanding industrial, telecommunications, and consumer electronics applications.

Typical applications include high voltage rectification in G2 grid CRTs and TVs, as well as snubber circuits in camera flashes, benefiting from its fast switching capabilities and high surge tolerance. The matte tin plated leads conform to soldering standards J-STD-002 and JESD 22-B102, facilitating secure, lead-free assembly processes. Polarity is clearly marked with a color band indicating the cathode end for error-free installation.

Fast switching diode with 6 ns peak reverse recovery time for high efficiency operation. Glass passivated junction with cavity-free design ensures reliability. Maximum forward voltage of 1.25 V and power dissipation of 350 mW.

Suitable for surface mount applications with a small footprint of 3.1 mm length and 1.43 mm width. Operating temperature range from -65°C to +150°C for versatile environments. Matte tin plated leads solderable per industry standards for robust mounting.

Color band denotes cathode end for easy polarity identification. Designed for high forward surge capability and low leakage current less than 0.2 μA.

This Switching Diode is widely used across industrial, electronic manufacturing, telecommunications equipment, laboratory instrumentation, and consumer electronic devices. Its reliable performance in high frequency and high voltage circuits makes it an essential component for designers and engineers seeking quality silicon diodes with long operational life.

Available for incorporation into PCB designs where space constraints and switch speed are critical, the Vishay BAW56-E3-08 offers excellent value and performance. Explore more semiconductor and diode options in the Electronics & Electricals category at EnvMart for industrial and commercial applications.

Vishay Silicon Junction Switching Diode Common Anode 250 mA 70 V 3-Pin SOT-23 BAW56-E3-08
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Frequently Asked Questions

The maximum forward current for this model is 250 mA.

This diode features a peak reverse recovery time of 6 nanoseconds, enabling fast switching performance.

The operating temperature range for this unit is from -65°C to +150°C, making it suitable for various environments.

It can withstand a maximum peak reverse repetitive voltage of 70 V.

This diode has a length of 3.1 mm, a width of 1.43 mm, and a height of 1.05 mm.

The BAW56-E3-08 comes in a SOT-23 package type, suitable for surface mount applications.

The maximum power dissipation for this diode is 350 mW.

The cathode end is indicated by a color band for easy polarity identification.

The leads are matte tin plated and solderable per industry standards.

This diode is suitable for high voltage rectification in G2 grid CRTs and snubber circuits in camera flashes.

This model is configured as a common anode switching diode.

The peak non-repetitive forward surge current is rated at 2 A.

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