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onsemi Switching Diode, Single Silicon Junction, 1 A, 200 V, 1.8 W, 2-Pin Surface Mount DO-214BA GF1D
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.7mm |
| Length | 4.7mm |
| Model | GF1D |
| Width | 2.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-214BA |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Maximum Power Dissipation Pd | 1.8W |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.1V |
| Peak Reverse Recovery Time trr | 2μs |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
Key Features
- This diode supports a maximum power dissipation of 1.8 watts.
- The peak reverse recovery time is 2 microseconds, suitable for switching applications.
- It operates reliably within a temperature range of -65°C to 175°C.
- Designed with a compact size of 4.7mm length, 2.9mm width, and 2.7mm height.
- Capable of handling a peak non-repetitive forward surge current of 30 A.
- Offers a maximum forward voltage of 1.1 V ensuring efficient conduction.
- The package ensures surface mounting compatibility for modern PCB assembly.
- Silicon junction technology provides reliable switching and rectification performance.
Product Description
onsemi GF1D Switching Diode is a single silicon junction diode designed for efficient switching applications with a maximum forward current of 1 ampere and peak reverse voltage rating of 200 volts. Encapsulated in a DO-214BA surface mount package with two pins, it offers compact dimensions of 4.7 mm length, 2.9 mm width, and 2.7 mm height, making it suitable for space-constrained electronic circuits.
This diode supports a maximum power dissipation of 1.8 watts and a peak reverse recovery time of 2 microseconds, ideal for fast switching operations in power management, signal processing, and industrial electronics.
Operating temperature ranges from -65°C to 175°C ensure stable performance under harsh environmental conditions often encountered in automotive and industrial applications. The diode can endure peak non-repetitive forward surge currents up to 30 amperes, providing robustness for transient events.
The maximum forward voltage drop of 1.1 volts helps maintain energy efficiency during conduction. Its surface mount DO-214BA package type facilitates automated PCB assembly for high-volume manufacturing.
This diode is part of onsemi's line of rectifier and switching diodes well suited for power conversion and signal shaping. Its silicon junction technology ensures reliable switching and rectification performance. Compact packaging allows integration into densely populated circuit boards.
Its electrical and thermal ratings qualify it for use in industrial, automotive, and commercial electronics. Designed for switching and rectifier applications requiring durability and precision. Explore the full range of semiconductor Switching Diodes at EnvMart to find components tailored to your electronic design needs with assured quality and standards compliance.
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Frequently Asked Questions
The maximum forward current of this diode is 1 ampere.
This model has a peak reverse voltage rating of 200 volts.
It supports a maximum power dissipation of 1.8 watts.
The dimensions of the DO-214BA package are 4.7 mm in length, 2.9 mm in width, and 2.7 mm in height.
It can handle a peak non-repetitive forward surge current of 30 amperes.
The operating temperature range is from -65°C to 175°C.
The peak reverse recovery time is 2 microseconds, making it suitable for fast switching applications.
The maximum forward voltage drop is 1.1 volts.
This diode has a pin count of 2.
It supports surface mounting, compatible with modern PCB assembly.
It is a single silicon junction diode designed for efficient switching applications.
This diode is suitable for power management, signal processing, and industrial electronics applications.
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