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Vishay Switching Diode, Single Silicon Junction, Surface Mount SOD-123 Package, 2-Pin, 150 mA, 50 V, 1 V 1N4151W-E3-08

Category Switching Diode Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 1.25mm
Length 2.85mm
Model 1N4151W-E3-08
Width 1.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Case DO-204AL, molded epoxy over glass body
Package Type SOD-123
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Polarity Color band denotes cathode end
Terminals Matte tin plated leads, solderable per
Pin Count 2
Maximum Power Dissipation Pd 410W
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 150mA
Maximum Peak Reverse Repetitive Voltage Vrrm 50V

Key Features

  • Features a superectifier structure for enhanced reliability.
  • Glass-passivated junction ensures low leakage current typically below 0.2 μA.
  • Capable of fast switching with recovery time of 4 ns for high efficiency.
  • High forward surge current capability up to 2 A.
  • Compact SOD-123 surface mount package with 2 pins for easy PCB integration.
  • Operational temperature range from -55°C to 150°C suitable for varied environments.
  • Matte tin plated leads provide solderability compliant with J-STD-002 standards.
  • Intended for high voltage rectification applications such as G2 grid CRT and TV circuits.

Product Description

Vishay 1N4151W-E3-08 is a high-reliability switching diode featuring a single silicon junction with a glass-passivated cavity-free structure that reduces leakage current and enables fast switching operations.

This diode is designed for surface mount applications in the compact SOD-123 package with two pins, facilitating easy PCB assembly and enhanced thermal management.

It supports a maximum forward current of 150 mA and a peak repetitive reverse voltage of 50 V, making it suitable for low to medium power electronic circuits requiring quick switching capabilities.

The diode offers a maximum power dissipation of 410 mW and a peak non-repetitive forward surge current of 2 A, ensuring robust performance under transient conditions. The maximum forward voltage drop is 1 V and the recovery time is very fast at 4 ns, supporting efficient signal rectification and minimizing switching losses.

Operating temperature ranges from -55°C to 150°C provide versatility across industrial, consumer electronics, and commercial applications. Its matte tin-plated leads comply with solderability standards J-STD-002 and JESD 22-B102, ensuring good solder joints during manufacturing processes.

Applications include high voltage rectification in G2 grid CRT and television circuits, as well as snubber circuits for camera flashes, capitalizing on fast switching and low leakage characteristics.

Features a superectifier structure for enhanced reliability. Glass-passivated junction ensuring low leakage current. Fast switching time of 4 ns for efficient performance. Compact 2-pin SOD-123 package for surface mounting.

Maximum current rating of 150 mA and voltage rating of 50 V. Wide operating temperature range from -55°C to 150°C. Peak surge current up to 2 A supports transient loads. Matte tin plated leads for industry-standard solderability.

Ideal for CRT, TV, and camera flash snubber circuit applications. Explore Vishay Switching Diodes and semiconductor components at EnvMart for high-quality and reliable electronic parts suitable for industrial and commercial uses.

Vishay Switching Diode, Single Silicon Junction, Surface Mount SOD-123 Package, 2-Pin, 150 mA, 50 V, 1 V 1N4151W-E3-08
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Frequently Asked Questions

The maximum forward current rating of this diode is 150 mA.

The peak reverse repetitive voltage for this model is 50 V.

The recovery time of this diode is 4 ns, allowing for fast switching operations.

This diode operates within a temperature range of -55°C to 150°C.

The diode is housed in a compact SOD-123 surface mount package.

The maximum power dissipation for this diode is 410 mW.

This diode features a single silicon junction with a glass-passivated structure.

This diode has 2 pins, making it suitable for easy PCB integration.

The peak non-repetitive forward surge current rating for this diode is 2 A.

The leads of this diode are matte tin plated, ensuring compliance with solderability standards.

This diode is suitable for high voltage rectification applications, such as G2 grid CRT and TV circuits.

The maximum forward voltage drop for this model is 1 V.

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