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Infineon Silicon Junction Switching Diode, Single, 60 A, 3-Pin, 650 V, TO-247 Package IDW30E65D1FKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | IDW30E65D1FKSA1 |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Power Dissipation Pd | 142W |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 240A |
| Maximum Forward Voltage Vf | 1.7V |
| Peak Reverse Recovery Time trr | 154ns |
| Maximum Forward Current If | 60A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V |
| Low reverse recovery charge | forward voltage ratio for BiC performance |
Key Features
- Supports a maximum forward current of 60 amperes for robust power handling.
- Constructed with a TO-247 through-hole package and features 3 pins.
- Maximum peak reverse repetitive voltage is 650 volts, ensuring reliability under high voltage conditions.
- Fast switching diodes operating at frequencies between 18 kHz to 100 kHz with low reverse recovery time of 154 ns.
- Maximum power dissipation is rated at 142 watts for durable operation.
- Operates effectively in temperature ranges from -40°C up to 175°C for industrial environments.
- Maximum forward voltage of 1.7 volts minimizes conduction losses.
- Peak non-repetitive forward surge current rating of 240 amperes for transient overcurrent protection.
Product Description
Infineon IDW30E65D1FKSA1 is a Silicon Junction Switching Diode designed as a single diode configuration in a TO-247 through-hole package with 3 pins. It supports a maximum forward current of 60 A and offers a maximum peak reverse repetitive voltage rating of 650 V. The diode delivers a maximum power dissipation of 142 W and is capable of operating in extreme temperatures ranging from -40°C to 175°C, making it suitable for demanding industrial and commercial electronic applications.
This diode features rapid switching capabilities, with the Rapid 1 family operating between 18 kHz and 40 kHz, and the Rapid 2 family operating between 40 kHz and 100 kHz. It combines a low reverse recovery charge with a forward voltage ratio optimized for bipolar integrated circuit (BiC) performance. The device provides a low reverse recovery time of 154 nanoseconds and low turn-on losses, improving efficiency in power factor correction (PFC) and motor drive applications up to 30 kHz.
The diode’s ultra-soft emitter-controlled technology offers good electromagnetic interference (EMI) behavior and ease of paralleling, making it ideal for various electronics including telecom systems, uninterruptible power supplies (UPS), welding equipment, and motor drives. Its voltage and current ratings provide robust performance in power electronics, ensuring durability and efficiency.
High maximum forward current of 60 A supports demanding power applications. Robust TO-247 package enhances thermal management and mechanical stability. Peak reverse recovery time of 154 ns accelerates switching speed and reduces losses.
Wide operating temperature range from -40°C to 175°C supports harsh environments. Low forward voltage of 1.7 V minimizes conduction losses. Peak surge current tolerance up to 240 A enhances protection against transient spikes.
Fast switching frequency suitable for telecom and industrial power supplies. Ultra-soft diode technology reduces turn-on losses and electromagnetic interference. Easy paralleling capability increases design flexibility for high-current applications.
This product is primarily used in industrial, electronic manufacturing, telecommunications, power supply, and motor drive systems requiring reliable high-current and voltage diode solutions. It complies with JEDEC standards and does not carry specific automotive certifications.
Explore the Infineon product range to find compatible discrete semiconductors ideal for your industrial and electronic component projects.
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Frequently Asked Questions
The maximum forward current of this model is 60 amperes, supporting robust power handling capabilities.
It has a peak reverse repetitive voltage rating of 650 volts, ensuring reliability under high voltage conditions.
The maximum power dissipation is rated at 142 watts, allowing for durable operation in various applications.
This diode operates effectively in temperature ranges from -40°C to 175°C, suitable for harsh environments.
The diode features a low reverse recovery time of 154 nanoseconds, which enhances switching speed and reduces losses.
It is constructed in a TO-247 through-hole package, which provides enhanced thermal management and mechanical stability.
The peak non-repetitive forward surge current rating is 240 amperes, providing transient overcurrent protection.
The maximum forward voltage is 1.7 volts, which minimizes conduction losses in power applications.
The dimensions of this model are 21.1 mm in height, 16.13 mm in length, and 5.21 mm in width.
This diode is primarily used in industrial, electronic manufacturing, telecommunications, power supply, and motor drive systems.
It features a 3-pin configuration, typical for its TO-247 package type.
This model is designed as a single diode configuration, suitable for various electronic applications.
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