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DiodesZetex Switching Diode, Single Silicon Junction, 3 A 400 V Surface Mount SMB S3GB-13-F

Category Switching Diode Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 2.3mm
Length 4.57mm
Model S3GB-13-F
Width 3.94mm
Mount Type Surface
Series S3GB
Maximum Operating Temperature 150°C
Package Type SMB
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 100A
Maximum Forward Voltage Vf 1.15V
Maximum Forward Current If 3A
Maximum Peak Reverse Repetitive Voltage Vrrm 400V

Key Features

  • This diode uses silicon junction technology offering reliable switching performance.
  • It features a surface mount SMB package for compact PCB mounting.
  • The diode supports a maximum forward current of 3 amperes for robust operation.
  • It withstands a maximum peak reverse repetitive voltage of 400 volts.
  • Designed to operate between -65°C and +150°C operating temperatures.
  • The peak non-repetitive forward surge current rating is 100 amperes.
  • The device has 2 pins and dimensions approximately 4.57 mm length by 3.94 mm width.
  • This diode is suitable for discrete semiconductor switching applications.

Product Description

The DiodesZetex S3GB-13-F is a high-performance Switching Diode designed for electronic applications requiring robust and reliable switching, with a maximum forward current of 3 A and a peak reverse voltage rating of 400 V. Manufactured with silicon junction technology, it ensures durability across a wide temperature range from -65°C to +150°C.

This diode is housed in a compact surface mount SMB package, suitable for modern printed circuit boards where space optimization is vital. With a slender profile measuring 4.57 mm in length, 3.94 mm in width, and 2.3 mm in height, it facilitates efficient layout and assembly in discrete semiconductor circuits.

The device's peak non-repetitive forward surge current of 100 A enables it to handle occasional high inrush currents safely, making it suitable for industrial, automotive, and power electronics uses where transient conditions occur. The 2-pin configuration allows straightforward installation and integration within switching circuits.

This diode finds extensive use in power and control electronics, switching regulators, and signal switching applications. Its reliability under harsh thermal conditions and high voltage stresses makes it suitable for demanding environments including industrial automation and instrumentation.

This diode uses silicon junction technology offering reliable switching performance. It features a surface mount SMB package for compact PCB mounting. The diode supports a maximum forward current of 3 amperes for robust operation.

It withstands a maximum peak reverse repetitive voltage of 400 volts. Designed to operate between -65°C and +150°C operating temperatures. The peak non-repetitive forward surge current rating is 100 amperes. The device has 2 pins and dimensions approximately 4.57 mm length by 3.94 mm width.

This diode is suitable for discrete semiconductor switching applications.

This product is ideal for use in industrial electronic circuits, automotive electronic systems, power supplies, and communication devices. For further product options and detailed data sheets, consult related semiconductor components within the Electronics & Electricals category.

DiodesZetex Switching Diode, Single Silicon Junction, 3 A 400 V Surface Mount SMB S3GB-13-F
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Frequently Asked Questions

The maximum forward current of this diode is 3 amperes.

It has a maximum peak reverse repetitive voltage rating of 400 volts.

This model measures approximately 4.57 mm in length, 3.94 mm in width, and 2.3 mm in height.

The diode operates within a temperature range of -65°C to +150°C.

It features a surface mount SMB package, which is suitable for compact PCB mounting.

The peak non-repetitive forward surge current rating is 100 amperes.

This diode has a 2-pin configuration, allowing for straightforward installation.

It uses silicon junction technology, which offers reliable switching performance.

It is suitable for discrete semiconductor switching applications, including power and control electronics, and automotive electronic systems.

The maximum forward voltage drop (Vf) is 1.15 volts.

The country of origin for this diode is India.

This diode is part of the S3GB series.

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