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onsemi N-Channel MOSFET, 24 A, 650 V, Enhancement Mode, 3-Pin TO-247 Package NTHL125N

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onsemi N-Channel MOSFET, 24 A, 650 V, Enhancement Mode, 3-Pin TO-247 Package NTHL125N

Name: onsemi N-Channel MOSFET, 24 A, 650 V, Enhancement Mode, 3-Pin TO-247 Package NTHL125N
Brand: onsemi
SKU: 171087

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Category Discrete Semiconductors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	41.34mm
Length	15.87mm
Model	NTHL125N
Width	4.8mm
Mount Type	Through Hole
Series	NTHL125N
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS, Pb-Free
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	24A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	125mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	171W
Typical Gate Charge Qg @ Vgs	44nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V

Key Features

Features enhancement mode channel operation for efficient switching.
Encapsulated in a durable 3-pin TO-247 through-hole package.
Maximum power dissipation of 171 W supports high load conditions.
Low typical gate charge of 44 nC allows for faster switching speeds.
Maximum drain-source resistance of 125 milliohms minimizes conduction losses.
Operates safely between temperatures of -55°C to 175°C for industrial reliability.
Forward voltage typical of 1.2 V ensures stable operation.
Complies with RoHS and is lead-free for environmental compliance.

Product Description

onsemi NTHL125N N-Channel MOSFET is a high-performance power semiconductor designed for industrial electronic applications requiring high voltage and current handling capabilities. Rated for a maximum continuous drain current of 24 A and a drain-source voltage of 650 V, this device supports demanding loads while maintaining efficiency through its enhancement mode channel operation.

The transistor is housed in a robust 3-pin TO-247 package suitable for through-hole mounting, enabling easy integration into power electronics circuits. The device exhibits a low drain-source resistance of 125 milliohms, reducing conduction losses and improving overall efficiency in power conversion systems.

With a maximum power dissipation rating of 171 W and a maximum gate-source voltage of 30 V, the NTHL125N offers reliable performance across a wide operating temperature range from -55°C to 175°C, making it ideal for industrial, power management, and HVAC applications.

The exceptionally low gate charge (44 nC typical) facilitates rapid switching, helping to minimize switching losses in high-frequency circuits. The device’s typical forward voltage of 1.2 V supports stable conduction under load.

Enhancement mode N-channel operation ensures efficient switching control. Durable TO-247 package designed for industrial power electronics. High maximum drain current and voltage ratings for demanding applications. Low gate charge for high-frequency switching efficiency.

Wide operating temperature range enhances reliability in harsh environments. RoHS compliant and lead-free for environmentally safe usage.

This MOSFET is commonly used in industrial power supplies, motor control, battery management systems, and switch mode power supplies. Its robust design and high electrical ratings make it suitable for manufacturing, construction equipment, and HVAC systems.

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