onsemi Dual N-Channel JFET-Channel JFET, 25 V, 20 to 40 mA, 6-Pin Surface Mount CPH6904-TL-E

onsemi CPH6904-TL-E is a dual N-channel junction field-effect transistor (JFET) designed for use in electronic and semiconductor circuits requiring stable switching and amplification characteristics. This device features a 6-pin surface mount CPH package that occupies minimal PCB space, with precise dimensions of 2.9mm length, 1.6mm width, and 0.9mm height, making it suitable for compact and high-density board layouts.

The transistor supports a maximum drain-source voltage (Vds) of 25 V and a maximum gate-source voltage (Vgs) of -25 V, enabling it to function reliably in moderate voltage environments. The drain-source current (Ids) ranges from 20 to 40 mA, allowing for flexibility in handling various signal currents in analog and switching applications.

Engineered to operate within a wide temperature range from -55°C to 150°C, the CPH6904-TL-E maintains performance under harsh environmental conditions, fitting industrial, automotive, and commercial electronic applications. With a maximum power dissipation of 400 mW, it ensures efficient thermal management during continuous operation.

This dual transistor device is commonly employed in signal amplification, switching circuits, and other discrete semiconductor uses in power supplies, amplifiers, and control circuitry. The surface mount design aids in automated assembly processes, improving manufacturing efficiency.

Key mechanical and electrical specifications include a 6-pin layout for easy PCB integration and a robust N-channel configuration optimized for switching and amplification tasks. The series CPH6904 is recognized for reliability and performance consistency across multiple electronic applications.

High-performance dual N-channel junction field-effect transistor. Surface mount type suitable for compact PCB designs. 6-pin CPH package with dimensions 2.9mm length, 1.6mm width, and 0.9mm height. Operates within temperature range -55°C to 150°C for reliability in harsh conditions.

Maximum drain-source voltage of 25 V and gate-source voltage of -25 V. Drain source current range between 20 to 40 mA supports varied circuit designs. Maximum power dissipation of 400 mW ensures stable operation. N-channel configuration for versatile semiconductor applications.

Designed for use in electronic equipment and discrete semiconductor devices. Explore more dual N-channel JFET transistors and discrete semiconductor devices at EnvMart for industrial, laboratory, and commercial electronics projects.

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