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Vishay Silicon Junction Diode, Single, 300 mA, 2-Pin Surface Mount SOD-80 Package, 50 V, 500 mW Power, AEC-Q101 LL4151-GS08

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Vishay Silicon Junction Diode, Single, 300 mA, 2-Pin Surface Mount SOD-80 Package, 50 V, 500 mW Power, AEC-Q101 LL4151-GS08

Name: Vishay Silicon Junction Diode, Single, 300 mA, 2-Pin Surface Mount SOD-80 Package, 50 V, 500 mW Power, AEC-Q101 LL4151-GS08
Brand: Vishay
SKU: 399771
Price: 0.04 USD
Availability: InStock

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Category Discrete Semiconductors Brand Vishay Condition New

Specifications

Country of Origin	India
Diameter	1.6mm
Brand	Vishay
Height	3.7mm
Length	1.6mm
Model	LL4151-GS08
Width	1.6mm
Mount Type	Surface
Series	LL4151
Maximum Operating Temperature	175°C
Package Type	SOD-80
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	2
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	500mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	2A
Maximum Forward Voltage Vf	1V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	300mA
Maximum Peak Reverse Repetitive Voltage Vrrm	50V

Key Features

Designed for extreme fast switching with a 4 ns peak reverse recovery time.
Compact surface mount SOD-80 package measuring 1.6 x 1.6 x 3.7 mm.
Supports a maximum forward current of 300 mA and power dissipation of 500 mW.
Operates reliably between -65°C and 175°C in harsh environments.
Complies with AEC-Q101 automotive standard for high reliability.
Withstands peak non-repetitive forward surge currents of 2 A.
Maximum forward voltage drop of 1 V for efficient conduction.
Ideal for fast switching applications in electronics and automotive sectors.

Product Description

The Vishay LL4151-GS08 is a high-speed silicon junction diode designed for fast switching applications in electronic circuits. It features a single diode configuration with a surface mount package type SOD-80, measuring 1.6 mm in length and width, and 3.7 mm in height, making it compact and suitable for space-constrained PCB designs.

With a maximum forward current rating of 300 mA and maximum power dissipation of 500 mW, this diode efficiently handles low power requirements while maintaining reliable operation over an extended temperature range from -65°C to 175°C. The maximum peak reverse repetitive voltage rating is 50 V, providing protection against voltage spikes.

This component offers a peak reverse recovery time of 4 ns, making it suitable for extreme fast switching needs in power and signal applications. Its maximum forward voltage drop is 1 V, contributing to energy efficiency in circuits. Additionally, it withstands peak non-repetitive forward surge currents up to 2 A, protecting against transient overloads.

The diode complies with the AEC-Q101 automotive standard, ensuring excellent reliability and performance in automotive and industrial environments. Its compact 2-pin SOD-80 package simplifies mounting and integration on printed circuit boards, especially in automated assembly processes.

Extreme fast switching for high-frequency applications. Compact surface mount SOD-80 package type for efficient PCB design. High temperature tolerance from -65°C to 175°C for industrial use. Automotive grade compliance with AEC-Q101 standard.

Reliable performance with a maximum forward current of 300 mA. Handles transient surge currents up to 2 A. Maximum power dissipation of 500 mW. Low forward voltage of 1 V enhances circuit efficiency.

This silicon junction diode is ideal for applications in power electronics, signal switching, automotive electronics, and other industrial sectors requiring fast and reliable diode solutions.

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