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onsemi Single N-Channel JFET Transistor 30 V 50 to 150 mA Surface Mount SOT-23 Package MMBF4391LT1G

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onsemi Single N-Channel JFET Transistor 30 V 50 to 150 mA Surface Mount SOT-23 Package MMBF4391LT1G

Name: onsemi Single N-Channel JFET Transistor 30 V 50 to 150 mA Surface Mount SOT-23 Package MMBF4391LT1G
Brand: onsemi
SKU: 415922
Price: 0.29 USD
Availability: InStock

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Category Discrete Semiconductors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	0.94mm
Length	2.9mm
Model	MMBF4391LT1G
Width	1.3mm
Mount Type	Surface
Configuration	Single
Maximum Operating Temperature	150°C
Package Type	SOT-23
Sub Type	JFET
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	30Ω
Maximum Power Dissipation Pd	225mW
Maximum Gate Source Voltage Vgs	30V
Drain Source Current Ids	50 to 150 mA
N-channel JFET,MMBF4391 50mA 30VBrand	ON Semiconductor

Key Features

Designed as a single N-channel junction field-effect transistor.
Compact 3-pin SOT-23 surface mount package for easy PCB mounting.
Maximum power dissipation rating of 225 mW ensures reliable operation.
Operates over a wide temperature range from -55°C to 150°C.
Features a maximum drain-source resistance of 30 ohms.
Suitable for discrete semiconductor applications requiring low noise and high input impedance.
Durable construction with a small form factor measuring 2.9 mm in length, 1.3 mm in width, and 0.94 mm in height.

Product Description

onsemi MMBF4391LT1G is a high-quality single N-channel JFET transistor designed for surface mount applications within electronic circuits. This device operates at a maximum drain-source voltage of 30 V and supports drain currents ranging from 50 to 150 mA. The transistor is housed in a compact SOT-23 package with 3 pins, making it suitable for high-density printed circuit boards.

Its maximum power dissipation is rated at 225 mW, which allows for effective heat management during device operation. The JFET features a maximum drain-source resistance of 30 ohms, enabling efficient switching capabilities.

Operating temperature range from -55°C to 150°C makes this transistor reliable under various environmental conditions encountered in industrial, automotive, and consumer electronics applications.

The device's small footprint and light weight contribute to design flexibility and ease of integration in modern electronic assemblies. Typical uses include low noise amplification, signal processing, and switching in discrete semiconductor circuits.

Designed as a single N-channel junction field-effect transistor. Compact 3-pin SOT-23 surface mount package for easy PCB mounting. Maximum power dissipation of 225 mW for reliable performance. Operating temperature range from -55°C to 150°C supports various applications.

Maximum drain-source resistance of 30 ohms ensures efficient switching. Small form factor with dimensions: 2.9 mm length, 1.3 mm width, 0.94 mm height. Suitable for industrial, automotive, and consumer electronics use cases.

This N-channel JFET transistor is ideal for electronic component assemblies requiring dependable, low-noise, and small-footprint discrete semiconductor devices. It is commonly employed in power management, signal amplification, and switching applications in electronic systems.

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