onsemi Single N-Channel Junction Field Effect Transistor 30 V 5 to 30 mA 3-Pin SOT-23 MMBF4393LT1G

onsemi MMBF4393LT1G is a single N-channel Junction Field Effect Transistor (JFET) designed for surface mount applications. It features a maximum drain-source voltage (Vds) of 30 volts and supports drain-source currents ranging between 5 and 30 milliamperes, making it suitable for switching and amplification circuits where precise current control is essential.

This JFET transistor is packaged in a compact SOT-23 3-pin surface mount housing, facilitating space-saving PCB layouts in industrial electronics, power supply modules, and signal processing systems. It offers reliable operation within a wide temperature range from -55°C to 150°C, accommodating challenging environments.

Its maximum power dissipation rating of 225 mW supports low to medium power electronic devices typically used in commercial and industrial hardware. With gate-source voltage (Vgs) tolerance up to 30 volts and a maximum drain-source resistance (Rds) of 100 ohms, the device provides durable and stable switching performance.

The transistor's dimensions are compact: length 3.04 mm, width 1.4 mm, and height 1.01 mm, suitable for high-density PCB assemblies. Its typical applications include electronic switching, amplification, and analog signal control in HVAC control systems, communication devices, manufacturing automation, and instrumentation.

The onsemi MMBF4393LT1G is compliant with industry standards but has no specialized automotive or other certifications. Its small size and robust electrical specifications make it a versatile choice for engineers seeking reliable N-channel JFET transistors for demanding industrial and electronic component applications.

Single N-channel JFET transistor useful in electronic switching applications. Surface mount device with a small footprint SOT-23 package. Maximum drain-source voltage of 30 volts for robust operation. Drain source current ranges from 5 to 30 milliamperes for application flexibility.

Maximum gate-source voltage rating of 30 volts ensures device protection. Operates reliably in temperatures from -55°C to 150°C. Maximum power dissipation of 225 milliwatts supports low power devices. Compact dimensions with length 3.04 mm, width 1.4 mm, and height 1.01 mm.

Ideal for use in industrial electronics, power management circuits, and signal processing. 3-pin configuration allows easy integration into circuit boards. Explore more high-quality semiconductor devices and discrete components at EnvMart for industrial, laboratory, communication, and manufacturing applications.

Explore more products in our Discrete Semiconductors category.