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Infineon HEXFET Type P-Channel MOSFET 4.3A 12V Enhancement Mode 3-Pin Micro Package IRLML6401TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRLML6401TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | Micro |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.3A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 50mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- The device features advanced HEXFET technology offering very low on-resistance.
- It supports a maximum power dissipation of 1.3W with a compact micro SOT-23 surface mount package.
- Designed for fast switching applications enabling improved circuit efficiency.
- Operates reliably over a temperature range of -55°C to 150°C ensuring robustness in harsh environments.
- Suitable for battery and load management systems and portable electronics requiring low-profile components.
- Offers a maximum gate-source voltage range of -8V to +8V facilitating flexible driving options.
- The device’s typical gate charge is 10nC, helping reduce switching losses.
- Compact dimensions of 3.04mm length, 1.4mm width, and 1.02mm height enable space-efficient PCB designs.
Product Description
Infineon IRLML6401TRPBF HEXFET Type P-Channel MOSFET is engineered to deliver efficient switching performance and thermal stability for electronic and power management applications.
The MOSFET utilizes advanced HEXFET technology, which ensures low on-resistance and reduces power loss during operation. Its capability to handle a maximum continuous drain current of 4.3 amperes and a maximum drain-source voltage of 12 volts makes it suitable for medium power applications requiring reliable load switching.
This device operates within a wide temperature range from -55°C up to 150°C junction temperature, supporting robust performance under demanding thermal conditions. Its enhancement mode channel provides efficient switching behavior optimized for high-speed circuits.
The IRLML6401TRPBF is housed in a compact micro SOT-23 package with a surface mount design, ideal for applications where PCB space is limited, such as in portable electronics and battery management systems.
Applications include battery and load management, PCMCIA power management, automation systems requiring dependable switching, and electronic circuits where compact surface mount MOSFETs are necessary.
The advanced HEXFET technology delivers low on-resistance for efficient power control. The small footprint package supports space-saving PCB layouts. Maximum power dissipation of 1.3 watts ensures efficient thermal handling.
Fast switching capability improves overall circuit responsiveness and reduces energy loss. Wide operating temperature range enables use in harsh or industrial environments. Typical gate charge of 10nC supports reduced switching losses.
Maximum gate-source voltage rating safeguards device reliability under various conditions. Compact dimensions facilitate integration into space-restricted designs.
This MOSFET is a reliable choice for engineers and designers looking for a robust and efficient P-channel MOSFET solution suitable for industrial, automotive, and consumer electronic applications.
Encounter diverse semiconductor needs with the Infineon MOSFET portfolio available at EnvMart. Explore more from Infineon and related semiconductor components to enhance your design and manufacturing processes.
Explore more products in our Discrete Semiconductors category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.3 amperes.
It can handle a maximum drain-source voltage of 12 volts.
This model operates reliably over a temperature range of -55°C to 150°C.
The typical gate charge is 10 nanocoulombs (10nC), which helps reduce switching losses.
The dimensions are 3.04mm in length, 1.4mm in width, and 1.02mm in height.
It is housed in a micro SOT-23 surface mount package.
The maximum power dissipation is 1.3 watts.
The maximum gate-source voltage is -8V to +8V.
This model uses an enhancement mode P-channel type channel.
The maximum drain-source resistance is 50 milliohms (50mΩ).
It is suitable for battery and load management systems, PCMCIA power management, and automation systems requiring reliable switching.
The country of origin for this device is India.
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