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Infineon HEXFET Type P-Channel MOSFET 4.3A 12V Enhancement Mode 3-Pin Micro Package IRLML6401TRPBF

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Infineon HEXFET Type P-Channel MOSFET 4.3A 12V Enhancement Mode 3-Pin Micro Package IRLML6401TRPBF

Name: Infineon HEXFET Type P-Channel MOSFET 4.3A 12V Enhancement Mode 3-Pin Micro Package IRLML6401TRPBF
Brand: Infineon
SKU: 153758

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Category Discrete Semiconductors Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.02mm
Length	3.04mm
Model	IRLML6401TRPBF
Width	1.4mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	150°C
Package Type	Micro
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	4.3A
Maximum Drain Source Voltage Vds	12V
Maximum Drain Source Resistance Rds	50mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.3W
Typical Gate Charge Qg @ Vgs	10nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	-1.2V

Key Features

The device features advanced HEXFET technology offering very low on-resistance.
It supports a maximum power dissipation of 1.3W with a compact micro SOT-23 surface mount package.
Designed for fast switching applications enabling improved circuit efficiency.
Operates reliably over a temperature range of -55°C to 150°C ensuring robustness in harsh environments.
Suitable for battery and load management systems and portable electronics requiring low-profile components.
Offers a maximum gate-source voltage range of -8V to +8V facilitating flexible driving options.
The device’s typical gate charge is 10nC, helping reduce switching losses.
Compact dimensions of 3.04mm length, 1.4mm width, and 1.02mm height enable space-efficient PCB designs.

Product Description

Infineon IRLML6401TRPBF HEXFET Type P-Channel MOSFET is engineered to deliver efficient switching performance and thermal stability for electronic and power management applications.

The MOSFET utilizes advanced HEXFET technology, which ensures low on-resistance and reduces power loss during operation. Its capability to handle a maximum continuous drain current of 4.3 amperes and a maximum drain-source voltage of 12 volts makes it suitable for medium power applications requiring reliable load switching.

This device operates within a wide temperature range from -55°C up to 150°C junction temperature, supporting robust performance under demanding thermal conditions. Its enhancement mode channel provides efficient switching behavior optimized for high-speed circuits.

The IRLML6401TRPBF is housed in a compact micro SOT-23 package with a surface mount design, ideal for applications where PCB space is limited, such as in portable electronics and battery management systems.

Applications include battery and load management, PCMCIA power management, automation systems requiring dependable switching, and electronic circuits where compact surface mount MOSFETs are necessary.

The advanced HEXFET technology delivers low on-resistance for efficient power control. The small footprint package supports space-saving PCB layouts. Maximum power dissipation of 1.3 watts ensures efficient thermal handling.

Fast switching capability improves overall circuit responsiveness and reduces energy loss. Wide operating temperature range enables use in harsh or industrial environments. Typical gate charge of 10nC supports reduced switching losses.

Maximum gate-source voltage rating safeguards device reliability under various conditions. Compact dimensions facilitate integration into space-restricted designs.

This MOSFET is a reliable choice for engineers and designers looking for a robust and efficient P-channel MOSFET solution suitable for industrial, automotive, and consumer electronic applications.

Encounter diverse semiconductor needs with the Infineon MOSFET portfolio available at EnvMart. Explore more from Infineon and related semiconductor components to enhance your design and manufacturing processes.

Explore more products in our Discrete Semiconductors category.