Toshiba Single N-Channel JFET, 10 V 1.2 to 3 mA, 3-Pin SOT-346 2SK209-Y(TE85L,F)

The Toshiba 2SK209-Y(TE85L,F) is a high-quality single N-channel Junction Field Effect Transistor (JFET) optimized for low voltage and low current electronic applications. It features a compact, surface-mountable 3-pin SOT-346 package, making it ideal for dense circuit layouts where space saving is critical.

This transistor operates with a maximum drain-source voltage (Vds) of 10 volts and drain-source current (Ids) ranging from 1.2 to 3 milliamps. It supports a maximum power dissipation rating of 150 milliwatts, allowing reliable operation within typical electronic device thermal constraints.

The device is designed for a broad operating temperature range of -55°C to 125°C, supporting use in automotive and industrial environments where temperature conditions may vary significantly. Its maximum drain-source resistance (Rds) is 1 kilo-ohm, ensuring efficient conduction characteristics within signal processing and switching circuits.

Additionally, the gate-source voltage (Vgs) maximum of -30 volts provides a stable control threshold, contributing to precise electronic behavior in analog and switching functions. The physical dimensions of the component are 2.9 mm in length, 1.5 mm in width, and 1.1 mm in height, supporting compact mounting needs.

Operates at maximum 10 V drain-source voltage and 1.2 to 3 mA current. Power dissipation up to 150 mW suitable for low power applications. Compact SOT-346 surface mount package with 3 pins for easy PCB integration. Wide operational temperature range from -55°C to 125°C for robust applications.

Low resistance of 1 kΩ contributing to efficient circuit operation. Maximum gate-source voltage rating of -30 V for stable transistor control. Dimensions: 2.9 mm length, 1.5 mm width, 1.1 mm height. Ideal for industrial, automotive, and consumer electronics requiring precise transistor performance.

New product condition ensures reliable and current manufacturing standards.

This Toshiba 2SK209-Y(TE85L,F) JFET serves diverse applications such as semiconductor discrete component replacement, signal amplification, switching circuits, and other electronic designs requiring stable and compact N-channel JFET technology.

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