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Vishay Silicon Junction Switching Diode Common Cathode 250 mA 70 V SOT-23 BAV70-E3-08

Category Discrete Semiconductors Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 1.05mm
Length 3.1mm
Model BAV70-E3-08
Width 1.43mm
Mount Type Surface
Maximum Operating Temperature 150°C
Case DO-204AL, molded epoxy over glass body
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Polarity Color band denotes cathode end
Terminals Matte tin plated leads, solderable per
Pin Count 3
Maximum Power Dissipation Pd 350mW
Diode Configuration Common Cathode
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 6ns
Maximum Forward Current If 250mA
Maximum Peak Reverse Repetitive Voltage Vrrm 70V

Key Features

  • Features a superectifier structure for enhanced reliability.
  • Cavity-free glass-passivated junction minimizes leakage current.
  • Supports maximum forward current of 250 mA with 1.25 V forward voltage.
  • Fast switching with a peak reverse recovery time of 6 nanoseconds.
  • Capable of maximum power dissipation of 350 mW and high forward surge current of 2 A.
  • Operates reliably between temperatures of -55°C to 150°C.
  • Comes in compact SOT-23 package with 3 pins for surface mount applications.
  • Ideal for high voltage rectification, snubber circuits, and camera flash applications.

Product Description

The Vishay BAV70-E3-08 is a Silicon Junction Switching Diode featuring a common cathode configuration designed for fast switching and high efficiency in electronic circuits. Rated for a maximum forward current of 250 mA and peak reverse voltage of 70 V, this diode is housed in a compact SOT-23 surface mount package with 3 pins measuring 3.1 mm in length, 1.43 mm in width, and 1.05 mm in height. It provides a maximum power dissipation of 350 mW and a maximum forward voltage drop of 1.25 V.

Its superectifier structure and cavity-free glass-passivated junction ensure high reliability with a low leakage current typically below 0.2 μA. The diode supports fast switching with a peak reverse recovery time of just 6 ns, making it highly suitable for high-speed applications such as high voltage rectification of G2 grid in CRT and TV, snubber circuits for camera flashes, and other industrial and consumer electronics.

The device operates effectively within a wide temperature range from -55°C to 150°C, meeting commercial grade standards. The diode’s terminals feature matte tin plated leads that are solderable according to J-STD-002 and JESD 22-B102 requirements, ensuring robustness and ease of assembly. Its epoxy molded DO-204AL case provides mechanical protection and meets UL 94 V-0 flammability ratings.

This diode is a reliable component extensively used in electronics, telecommunications, and industrial manufacturing sectors requiring efficient switching and rectification functions in compact footprint designs.

Superectifier structure for enhanced reliability. Cavity-free glass passivated junction for low leakage current. Fast switching with 6 ns peak reverse recovery time. Maximum forward current of 250 mA and forward voltage of 1.25 V.

Maximum power dissipation of 350 mW and high surge current capacity. Temperature operating range from -55°C to 150°C. SOT-23 surface mount package with 3 pins. Matte tin plated solderable leads. Epoxy molded body with UL 94 V-0 flammability rating.

Applications in high voltage rectification, snubber circuits, and camera flashes. Explore our extensive range of semiconductor components and switching diodes available on EnvMart for your industrial, manufacturing, electronics design, and repair needs.

Explore more products in our Discrete Semiconductors category.

Vishay Silicon Junction Switching Diode Common Cathode 250 mA 70 V SOT-23 BAV70-E3-08
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