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Infineon StrongIRFET N-Channel MOSFET 110 A, 60 V Enhancement 3-Pin TO-220 IRFB7540PBF

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Infineon StrongIRFET N-Channel MOSFET 110 A, 60 V Enhancement 3-Pin TO-220 IRFB7540PBF

Name: Infineon StrongIRFET N-Channel MOSFET 110 A, 60 V Enhancement 3-Pin TO-220 IRFB7540PBF
Brand: Infineon
SKU: 377600
Price: 1.05 USD
Availability: InStock

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Category Discrete Semiconductors Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	16.51mm
Length	10.67mm
Model	IRFB7540PBF
Width	4.83mm
Mount Type	Through Hole
Series	StrongIRFET
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	110A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	5.1mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	160W
Typical Gate Charge Qg @ Vgs	88nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

StrongIRFET technology optimized for low RDS(on) and high current capability.
Enhancement mode channel with through-hole mount design.
Maximum power dissipation rating of 160 W suited for industrial applications.
Operating temperature range from -55°C to 175°C for robust performance.
Typical gate charge of 88 nC ensures efficient switching.
Maximum drain-source resistance of 5.1 mΩ reduces conduction losses.
Compatible for motor drives, power tools, inverters, and battery management systems.
Compact dimensions of 16.51mm height, 10.67mm length, and 4.83mm width.

Product Description

Infineon IRFB7540PBF is a StrongIRFET N-Channel MOSFET designed for demanding industrial applications requiring low conduction losses and high current capability. Featuring a 3-pin TO-220 package and through-hole mounting, it supports a maximum continuous drain current of 110 A and a drain-source voltage of 60 V.

The enhancement mode MOSFET provides a maximum drain-source resistance of 5.1 mΩ and typical gate charge of 88 nC, ensuring efficient switching characteristics. It is rated for power dissipation up to 160 W and operates reliably between -55°C and 175°C, making it suitable for power tools, motor drives, inverters, and battery management systems.

Its compact form factor with a height of 16.51 mm, length of 10.67 mm, and width of 4.83 mm allows integration into space-constrained designs. The device’s forward voltage is rated at 1.2 V with a gate-source voltage tolerance of -20 V to +20 V.

StrongIRFET technology optimized for low on-resistance and high current handling. Robust thermal and electrical performance in harsh industrial environments. Interface suitability for industrial, automotive, and power management applications.

Through-hole mounting in standard TO-220 package for ease of assembly. Designed to handle high power and transient loads efficiently. Wide operating temperature range accommodates extreme conditions. Compact dimensions facilitate incorporation into various electronic assemblies.

Ideal for use in motor drives, power tools, battery management, and inverter circuits.

This Infineon StrongIRFET MOSFET provides reliable, efficient switching performance optimized for industrial semiconductor applications, fulfilling high quality and robustness demands. Explore more advanced semiconductors and power devices at EnvMart for your industrial and commercial electronic component needs.

Explore more products in our Discrete Semiconductors category.