$4.70
$4.56
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
STMicroelectronics Type N-Channel Insulated Gate Bipolar Transistor IGBT 30A 600V 260W TO-247 Through Hole STGW30V60F
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Model | STGW30V60F |
| Mount Type | Through Hole |
| Series | V |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Channel Type | Type N |
| Maximum Power Dissipation Pd | 260W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
| Fairchild HGTG12N60C3D IGBT, 24 A 600 V, 3-Pin TO-247, Through HoleBrand | Fairchild Semiconductor |
Key Features
- Rated for maximum continuous collector current of 30 amperes.
- Supports a maximum collector-emitter voltage of 600 volts for high voltage applications.
- Maximum power dissipation is 260 watts enabling efficient thermal management.
- Robust TO-247 package with through hole mounting ensures reliable mechanical and electrical connectivity.
- Operates safely in temperatures ranging from -55°C up to 175°C.
- Maximum gate-emitter voltage of ±20 volts provides gate control flexibility.
- Low collector-emitter saturation voltage of 2.3 volts minimizes conduction losses.
- Designed according to RoHS compliant standards ensuring environmental safety.
Product Description
STMicroelectronics STGW30V60F is a high-efficiency N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for fast switching and robust power control. Featuring a maximum continuous collector current of 30 amperes and rated for collector-emitter voltages up to 600 volts, this device is housed in a 3-pin TO-247 through hole package, which guarantees durability and ease of integration into power electronics systems.
The IGBT device combines MOSFET gate-drive characteristics with bipolar transistor current handling, providing a low saturation voltage of 2.3 volts which reduces conduction losses and enhances overall energy efficiency. Its maximum power dissipation rating is 260 watts, allowing reliable operation under significant load conditions.
Rated for operation in extreme temperatures from -55°C to 175°C, this component is suitable for demanding industrial, manufacturing, and power electronic applications where such temperature ranges are typical. The gate-emitter voltage tolerance of ±20 volts offers design flexibility for various control circuit configurations.
STGW30V60F fully complies with RoHS environmental standards, assuring users of its eco-friendly design and manufacturing. This Discrete Semiconductor device is especially useful in power switching applications in industrial electronics, HVAC systems, motor drives, and power inverters.
Rated maximum continuous collector current: 30 A. Maximum collector-emitter voltage: 600 V. Power dissipation: 260 W. Package type: TO-247 through hole. Operating temperature range: -55°C to 175°C. Maximum gate-emitter voltage: ±20 V.
Collector-emitter saturation voltage: 2.3 V. RoHS compliant. Pin count: 3. Type N channel. Explore the comprehensive range of semiconductors and discrete devices at EnvMart for your industrial and electronic assembly needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous collector current for this model is 30 amperes.
It supports a maximum collector-emitter voltage of 600 volts, making it suitable for high voltage applications.
The maximum power dissipation rating is 260 watts, allowing for efficient thermal management under load conditions.
It operates safely in temperatures ranging from -55°C to 175°C, suitable for demanding industrial applications.
The STGW30V60F is housed in a TO-247 package, which features a through hole mounting design.
The maximum gate-emitter voltage is ±20 volts, providing flexibility for various control circuit configurations.
The collector-emitter saturation voltage is 2.3 volts, which helps minimize conduction losses.
This model has a pin count of 3, making it compatible with standard mounting configurations.
Yes, it is designed according to RoHS compliant standards, ensuring environmental safety.
This IGBT is a Type N-Channel, which is common for power semiconductor applications.
The country of origin for this model is India.
It is especially useful in power switching applications in industrial electronics, HVAC systems, motor drives, and power inverters.
Related Products
$0.67
$0.65
-3%
New
Other Products from this brand
$0.69
$0.67
-3%
New
$0.57
$0.55
-3%
New
$1.44
$1.40
-3%
New
$1.89
$1.83
-3%
New
Recently Viewed Products
$4.70
$4.56
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent