Vishay Silicon Junction Switching Diode, Single, 250 mA, 2-Pin SOD-123, 200 V, 410 mW BAV20W-E3-18

Vishay BAV20W-E3-18 is a high-performance silicon junction switching diode ideal for industrial and electronic applications requiring fast switching and high reliability. This single diode supports a maximum forward current of 250 mA and a peak repetitive reverse voltage rating of 200 V, making it suitable for switching operations in power supplies, signal processing, and other semiconductor circuits.

The device is encapsulated in a compact SOD-123 surface mount package measuring 2.85 mm in length, 1.7 mm in width, and 1.25 mm in height. Its cavity-free glass passivated junction and superectifier structure ensure enhanced durability and low leakage currents typically below 0.2 μA, maintaining efficiency during operation.

With a peak reverse recovery time of 50 ns and a maximum power dissipation of 410 mW, this diode guarantees fast response times and stable thermal performance. The diode withstands operating temperatures from -55°C to 150°C, suitable for demanding environments in consumer electronics, automotive circuits, and industrial control systems.

Additional features include high forward surge current capacity of 2.5 A and matte tin-plated solderable leads compliant with J-STD-002 standards. The cathode marking band simplifies correct installation. Its plastic molded DO-204AL case meets UL 94 V-0 flammability rating, ensuring safe use in a broad range of applications.

Typical uses include high voltage rectification in CRT and TV grids, snubber circuits for camera flash units, and other fast switching semiconductor needs in manufacturing and laboratory electronics.

The diode features a superectifier structure with a cavity-free glass-passivated junction. Maximum forward current rating is 250 mA with a maximum forward voltage of 1.25 V. It operates within a temperature range of -55°C to 150°C.

The diode is housed in a SOD-123 surface mount package with 2 pins. Maximum power dissipation is 410 mW with a peak reverse voltage of 200 V. Fast switching speed with peak reverse recovery time of 50 ns. The diode offers high surge capability with a peak non-repetitive forward surge current of 2.5 A.

Terminals are matte tin plated, solderable per standard J-STD-002 and JESD 22-B102. The cathode end is marked by a color band for polarity identification. Manufactured in China with a DO-204AL epoxy glass body case. Explore more Vishay semiconductor components and switching diodes at EnvMart for reliable industrial and laboratory use.

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