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Infineon HEXFET N-Channel Automotive MOSFET 30 A, 55 V, TO-252 Surface Mount Package IRFR4105ZTRPBF

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Infineon HEXFET N-Channel Automotive MOSFET 30 A, 55 V, TO-252 Surface Mount Package IRFR4105ZTRPBF

Name: Infineon HEXFET N-Channel Automotive MOSFET 30 A, 55 V, TO-252 Surface Mount Package IRFR4105ZTRPBF
Brand: Infineon
SKU: 379020
Price: 20.22 USD
Availability: InStock

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Category Discrete Semiconductor Brand Infineon Condition New

Specifications

Country of Origin	China
Brand	Infineon
Height	2.39mm
Length	6.73mm
Model	IRFR4105ZTRPBF
Width	6.22mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Standards/Approvals	Automotive (Q101)
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	30A
Maximum Drain Source Voltage Vds	55V
Maximum Drain Source Resistance Rds	24.5mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	120W
Typical Gate Charge Qg @ Vgs	18nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.3V

Key Features

Maximum continuous drain current of 30 A supports robust power handling.
Drain-source voltage rating of 55 V for reliable operation in automotive environments.
Low on-resistance (Rds(on)) of 24.5 mΩ enhances energy efficiency.
Available in a compact TO-252 DPAK surface-mount package for easy PCB integration.
Supports operating temperatures from -55°C up to +175°C for extreme environments.
Enhancement mode channel technology assures dependable switching.
Maximum power dissipation of 120 W enables handling of substantial loads.
Typical gate charge of 18 nC allowing quick switching performance.

Product Description

Infineon IRFR4105ZTRPBF is a HEXFET N-Channel Automotive MOSFET engineered for applications requiring high efficiency, durability, and reliable power management.

Rated for a maximum continuous drain current of 30 A and a drain-source voltage of 55 V, it is well suited for automotive electronics and high-demand industrial environments. Its low on-resistance of 24.5 mΩ reduces conduction losses, improving energy efficiency in switching circuits.

The device comes in a TO-252 (DPAK) surface mount package facilitating easy assembly and reduced PCB footprint. It supports switching through enhancement mode channel technology and can dissipate up to 120 W, making it suitable for demanding power supply and motor driver applications.

Operating capabilities span from -55°C to +175°C, ensuring performance stability in harsh temperature conditions common in automotive and industrial settings.

Typical gate charge of 18 nC enables efficient switching speed, while the MOSFET meets the stringent automotive standard AEC-Q101 assuring quality and reliability for mission-critical systems.

Maximum continuous drain current of 30 A supports robust power handling. Drain-source voltage rating of 55 V for reliable operation in automotive environments. Low on-resistance (Rds(on)) of 24.5 mΩ enhances energy efficiency.

Compact TO-252 DPAK surface mount package for easy PCB integration. Wide operating temperature range from -55°C to +175°C ensures durability. Enhancement mode channel technology for dependable switching. Power dissipation capability up to 120 W for substantial load management.

Typical gate charge of 18 nC for quick switching performance. Approved under automotive standard AEC-Q101 for high reliability.

This MOSFET is ideal for power management circuits in automotive applications, motor drivers, power converters, switching power supplies, and consumer electronics requiring efficient power control.

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