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Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement Mode, 3-Pin SOT-23 SI2337DS-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2337DS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -50°C |
| Standards/Approvals | IEC 61249-2-21 |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.2A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 0.303Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 11nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET features an enhancement mode channel suitable for surface-mount applications.
- Maximum drain-source resistance is 0.303 ohms, ensuring low conduction losses.
- Power dissipation capability is rated up to 2.5 W for reliable thermal performance.
- Operational temperature ranges from -50°C to 150°C, suitable for diverse environments.
- Typical gate charge is 11 nC at Vgs, enabling efficient switching.
- Provides forward voltage drop of 1.2 V and gate-source voltage range of -20 V to +20 V.
- Package dimensions are compact with length 3.04 mm, width 1.4 mm, and height 1.02 mm.
- Conforms to IEC 61249-2-21 standards, ensuring quality and reliability.
Product Description
Vishay's SI2337DS-T1-GE3 TrenchFET type P-Channel MOSFET is designed for discrete semiconductor applications requiring efficient power switching and amplification. This device supports a maximum continuous drain current of 2.2 amperes and withstands a maximum drain-source voltage of 80 volts, making it suitable for a range of low-voltage power management and signal switching tasks.
Encased in a compact 3-pin SOT-23 surface-mount package, the MOSFET features low drain-source resistance (Rds(on)) of 0.303 ohms, aiding in reduced power losses and enhanced efficiency. The power dissipation capability of 2.5 watts supports stable operation under typical load conditions. Designed for rugged environments, it operates reliably in temperatures from -50°C to 150°C, suitable for industrial and commercial electronic equipment.
The device operates in enhancement mode, offering a gate charge of 11 nC at a typical gate-source voltage, facilitating fast switching cycles. With a forward voltage of 1.2 V and robust gate-source voltage withstand of -20 to +20 volts, it ensures robust control and protection in circuits.
Precise mechanical dimensions (length 3.04 mm, width 1.4 mm, height 1.02 mm) allow compact PCB layouts. It complies with IEC 61249-2-21 standards, confirming its material and construction quality, ideal for professional electronics manufacturing and assembly.
This MOSFET is widely used in power management, signal switching, amplification, and automotive electronics industries, supporting a variety of applications from embedded systems to DC-DC conversion modules.
This MOSFET features an enhancement mode channel suitable for surface-mount applications. Maximum drain-source resistance is 0.303 ohms, ensuring low conduction losses. Power dissipation capability is rated up to 2.5 W for reliable thermal performance.
Operational temperature ranges from -50°C to 150°C, suitable for diverse environments. Typical gate charge is 11 nC at Vgs, enabling efficient switching. Provides forward voltage drop of 1.2 V and gate-source voltage range of -20 V to +20 V.
Package dimensions are compact with length 3.04 mm, width 1.4 mm, and height 1.02 mm. Conforms to IEC 61249-2-21 standards, ensuring quality and reliability. Explore more high-quality Discrete Semiconductor devices from Vishay in the Electronics & Electricals section of EnvMart for your industrial and engineering needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.2 amperes.
It can withstand a maximum drain-source voltage of 80 volts.
The power dissipation capability is rated up to 2.5 watts.
The typical gate charge at Vgs is 11 nC.
The package dimensions are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The maximum operating temperature is 150°C.
The minimum operating temperature is -50°C.
The maximum drain-source resistance (Rds(on)) is 0.303 ohms.
The forward voltage drop is 1.2 V.
The gate-source voltage range is from -20 V to +20 V.
It conforms to IEC 61249-2-21 standards.
This model features an enhancement mode channel.
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