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onsemi Silicon Junction Diode, Single Configuration, 1 A Maximum Forward Current, 50 V Peak Reverse Voltage, DO-41 1N4006RLG

Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin India
Diameter 2.7mm
Brand onsemi
Height 5.2mm
Length 54.9mm
Model 1N4006RLG
Finish All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Gross Weight 0.4 Gram
Width 2.7mm
Mount Type Through Hole
Maximum Operating Temperature 175°C
Case Epoxy, Molded
Package Type DO-41
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Polarity Cathode Indicated by Polarity Band
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.1V
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 50V
Lead Temperature for Soldering Purposes 260°C Max for 10 Seconds
Fairchild 800V 1A, Silicon Junction Diode, 2-Pin DO-41 1N4006Brand Fairchild Semiconductor

Key Features

  • Designed for general purpose low power electronic applications.
  • Epoxy molded case ensures external corrosion resistance.
  • Terminal leads are readily solderable for easy PCB mounting.
  • Maximum forward voltage is 1.1 V ensuring efficient rectification.
  • Operating temperature range from -65 to 175 °C for versatile thermal performance.
  • Peak non-repetitive forward surge current of 30 A for transient conditions.
  • Cathode is indicated by a polarity band for correct orientation.
  • Compact size with 54.9 mm length and 2.7 mm diameter for space-saving circuit design.

Product Description

onsemi 1N4006RLG is a reliable silicon junction diode designed for Discrete Semiconductor applications requiring standard recovery characteristics. This single diode configuration supports a maximum forward current of 1 A and can withstand a peak reverse voltage of 50 V, making it suitable for various general-purpose low-power electronic circuits.

The device is housed in a DO-41 package which is epoxy molded for corrosion resistance and durability, with terminal leads designed for efficient through-hole PCB mounting. Its small form factor includes a length of 54.9 mm and a 2.7 mm diameter, facilitating compact circuit designs.

The diode supports a wide operating temperature range from -65 °C to 175 °C, allowing it to perform reliably in harsh environmental conditions. With a maximum forward voltage drop of 1.1 V, this diode offers efficient rectification and low power loss.

The 1N4006RLG diode is engineered to handle a peak non-repetitive forward surge current of 30 A, providing robustness against transient current spikes typically found in power supply circuits.

The cathode side is clearly marked by a polarity band for accurate installation and minimization of circuit errors. The lead temperature rating of up to 260 °C for 10 seconds ensures compatibility with common soldering processes.

This diode is commonly used in high frequency inverters, free wheeling, and polarity protection applications in industrial, commercial, and laboratory electronics. Its corrosion-resistant case and solderable leads extend its suitability to manufacturing environments that demand durability and performance consistency.

Designed for general purpose low power electronic applications. Epoxy molded case ensures external corrosion resistance. Terminal leads are readily solderable for easy PCB mounting. Maximum forward voltage is 1.1 V ensuring efficient rectification.

Operating temperature range from -65 to 175 °C for versatile thermal performance. Peak non-repetitive forward surge current of 30 A for transient conditions. Cathode is indicated by a polarity band for correct orientation.

Compact size with 54.9 mm length and 2.7 mm diameter for space-saving circuit design. Suitable for use in high frequency inverters, free wheeling, and polarity protection diodes. Lead temperature for soldering up to 260 °C for 10 seconds ensures robust assembly.

Explore further power semiconductors and discrete devices from onsemi at EnvMart to enhance your electronic design and manufacturing projects.

onsemi Silicon Junction Diode, Single Configuration, 1 A Maximum Forward Current, 50 V Peak Reverse Voltage, DO-41 1N4006RLG
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Frequently Asked Questions

The maximum forward current of this diode is 1 A.

It can withstand a peak reverse voltage of 50 V.

The operating temperature range is from -65 °C to 175 °C.

The maximum forward voltage drop is 1.1 V.

This diode has a length of 54.9 mm, a diameter of 2.7 mm, and is designed for through-hole mounting.

The diode can handle a peak non-repetitive forward surge current of 30 A.

The cathode side is indicated by a polarity band for correct orientation.

It features an epoxy molded case which provides corrosion resistance.

The dimensions are 54.9 mm in length and 2.7 mm in diameter.

The lead temperature rating for soldering is up to 260 °C for a maximum of 10 seconds.

It is commonly used in high frequency inverters, free wheeling, and polarity protection applications.

The gross weight of this diode is 0.4 grams.

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