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onsemi Single N-Channel JFET-Channel JFET 2 mA, 3-Pin TO-92 J113

Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 5.33mm
Length 5.2mm
Model J113
Width 4.19mm
Mount Type Through Hole
Configuration Single
Maximum Operating Temperature 150°C
Package Type TO-92
Sub Type JFET
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Drain Source Resistance Rds 100Ω
Maximum Power Dissipation Pd 625mW
Maximum Gate Source Voltage Vgs -35V
Drain Source Current Ids 2 mA

Key Features

  • The transistor has a maximum power dissipation rating of 625 mW.
  • It features a maximum drain source resistance of 100 ohms.
  • Operating temperature range spans from -55°C to 150°C.
  • The device features a maximum gate source voltage of -35 volts.
  • Compact dimensions with length 5.2 mm, width 4.19 mm, and height 5.33 mm.
  • Single configuration N-channel JFET suitable for discrete semiconductor applications.
  • Ideal for electronic circuits requiring low noise and high input impedance.
  • Through hole mount type simplifies prototyping and manufacturing processes.

Product Description

onsemi J113 is a Single N-Channel JFET-Channel JFET transistor packaged in a 3-pin TO-92 format, designed for through hole installation. It supports a drain source current of 2 mA and operates over a wide temperature range from -55°C to 150°C, making it suitable for robust industrial and laboratory applications.

This device offers a maximum power dissipation of 625 mW and a maximum drain source resistance of 100 ohms, making it efficient for signal amplification and switching in semiconductor circuits.

Its compact dimensions (length 5.2 mm, width 4.19 mm, height 5.33 mm) and single configuration make it ideal for use in precision electronic equipment and general semiconductor discrete component applications.

The maximum gate source voltage of -35V allows it to handle typical control voltages safely.

Commonly applied in electronic circuits requiring low noise, high input impedance, and stable operation, it finds use in industrial electronics, measurement devices, and embedded system design.

The transistor has a maximum power dissipation rating of 625 mW. It features a maximum drain source resistance of 100 ohms. Operating temperature range spans from -55°C to 150°C. The device features a maximum gate source voltage of -35 volts.

Compact dimensions with length 5.2 mm, width 4.19 mm, and height 5.33 mm. Single configuration N-channel JFET suitable for Discrete Semiconductor applications. Ideal for electronic circuits requiring low noise and high input impedance.

Through hole mount type simplifies prototyping and manufacturing processes. Explore the range of onsemi semiconductor products at EnvMart for reliable, high-quality electronic components suitable for industrial, commercial, and laboratory use.

onsemi Single N-Channel JFET-Channel JFET 2 mA, 3-Pin TO-92 J113
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