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onsemi Single Type P-Channel JFET, Surface Mount 3-Pin SOT-23, 15 V, -7 to -60 mA, 225 mW MMBFJ175LT1G

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onsemi Single Type P-Channel JFET, Surface Mount 3-Pin SOT-23, 15 V, -7 to -60 mA, 225 mW MMBFJ175LT1G

Name: onsemi Single Type P-Channel JFET, Surface Mount 3-Pin SOT-23, 15 V, -7 to -60 mA, 225 mW MMBFJ175LT1G
Brand: onsemi
SKU: 382670
Price: 0.16 USD
Availability: InStock

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Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.01mm
Length	3.04mm
Model	MMBFJ175LT1G
Width	1.4mm
Mount Type	Surface
Configuration	Single
Maximum Operating Temperature	150°C
Package Type	SOT-23
Sub Type	JFET
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Drain Source Voltage Vds	15V
Maximum Drain Source Resistance Rds	125Ω
Maximum Power Dissipation Pd	225mW
Maximum Gate Source Voltage Vgs	-25V
Drain Source Current Ids	-7 to -60 mA

Key Features

Designed for surface mount applications in SOT-23 package.
Maximum power dissipation of 225 mW ensures efficient operation.
Wide operating temperature range from -55°C to 150°C for reliability.
Drain-source resistance up to 125 ohms supports stable conduction.
Maximum gate-source voltage of -25 V for robust control.
Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.01 mm height.
Single configuration type suitable for various electronic designs.
Ideal for low-level analog switching and amplification in industrial circuits.

Product Description

onsemi MMBFJ175LT1G is a single type P-Channel JFET designed for reliable semiconductor switching and amplification in diverse industrial and electronic applications. Built in a compact 3-pin SOT-23 surface mount package, this transistor offers a maximum drain-source voltage of 15 V and can conduct currents between -7 and -60 mA with a power dissipation rating of 225 mW.

The device supports a wide operating temperature range from -55°C to 150°C, making it suitable for harsh environmental conditions often encountered in industrial, laboratory, and manufacturing settings. Its low maximum drain-source resistance of 125 ohms and a maximum gate-source voltage of -25 V enable precise control and efficient signal modulation.

Sized at 3.04 mm length, 1.4 mm width, and 1.01 mm height, the MMBFJ175LT1G fits well in space-constrained circuit designs. This transistor type is widely used for analog switching, signal amplification, and other semiconductor device applications requiring reliable P-Channel JFET characteristics.

Designed for surface mount applications in SOT-23 package. Maximum power dissipation of 225 mW ensures efficient operation. Wide operating temperature range from -55°C to 150°C for reliability. Drain-source resistance up to 125 ohms supports stable conduction.

Maximum gate-source voltage of -25 V for robust control. Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.01 mm height. Single configuration type suitable for various electronic designs. Ideal for low-level analog switching and amplification in industrial circuits.

This product is well suited for industrial, laboratory, manufacturing, and electronic power connector use cases. It meets standard semiconductor performance criteria and is supplied as new.

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