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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | MMBFJ177LT1G |
| Width | 1.4mm |
| Mount Type | Surface |
| Configuration | Single |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Sub Type | JFET |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Drain Source Voltage Vds | -25V dc |
| Maximum Drain Source Resistance Rds | 300Ω |
| Maximum Power Dissipation Pd | 225mW |
| Maximum Gate Source Voltage Vgs | 25V dc |
| Drain Source Current Ids | 1.5 to 20 mA |
onsemi MMBFJ177LT1G is a high-quality P-Channel JFET transistor specifically designed for surface mounting on printed circuit boards using the SOT-23 package. It operates with a maximum drain-source voltage of -25 V DC, supporting currents in the range of 1.5 to 20 mA, making it suitable for a variety of analog and switching circuitry applications.
The transistor features a maximum power dissipation rating of 225 milliwatts ensuring reliable performance in low power electronic designs. With a pin count of 3, the compact SOT-23 footprint facilitates tight placement on modern PCB layouts, supporting miniaturization efforts in industrial and consumer electronics.
Robust operating temperature range from -55 degrees Celsius to 150 degrees Celsius ensures stable functionality even under extreme environmental conditions, ideal for automotive, industrial, and laboratory equipment.
Additional electrical parameters such as maximum drain-source resistance of 300 ohms and maximum gate-source voltage of 25 V DC provide stability and protection within circuits employing this transistor.
Physical dimensions measuring 3.04 mm length, 1.4 mm width, and 1.01 mm height allow efficient board space utilization and support surface mount technology manufacturing processes.
Operates at max -25 V DC drain-source voltage. Drain-source current range 1.5 to 20 mA. Power dissipation rating of 225 mW. SOT-23 3-pin surface mount package. Operational temperature from -55°C to 150°C. Maximum drain-source resistance 300 ohms.
Maximum gate-source voltage rating of 25 V DC. Compact physical size supports PCB design flexibility. Single channel, P-Channel JFET configuration.
This transistor is widely used in Discrete Semiconductor applications including industrial electronics, telecommunications, signal processing, and other electronic component designs requiring reliable precision switching. The device is mounted using surface mount technology suitable for automated production lines.
Explore more high-performance semiconductor components from onsemi and expand your design capabilities with proven reliability and quality technology.
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