DiodesZetex DMP Type P-Channel MOSFET, 17 A, 30 V Enhancement Mode, 3-Pin TO-252 Package DMP3010LK3-13

DiodesZetex DMP3010LK3-13 is a P-Channel MOSFET transistor designed for surface mount applications requiring efficient power switching and control at moderate voltages and currents.

This semiconductor device offers a maximum continuous drain current of 17 amperes and a maximum drain-source voltage of 30 volts, allowing it to handle significant current loads in electronic circuits.

Manufactured with an enhancement mode channel, it operates with a maximum gate-source voltage of ±20 volts, enabling precise control in switching applications.

The MOSFET is enclosed in a reliable TO-252 package type, characterized by dimensions of 6.7 mm length, 6.2 mm width, and 2.39 mm height. This compact form factor facilitates easy installation in printed circuit boards with surface mount technology.

With a maximum power dissipation of 3.4 watts, this device maintains stable performance even in demanding environments. It supports a wide operating temperature range from -55°C to 150°C, suitable for industrial, automotive, and commercial electronics.

The typical gate charge of 59.2 nC ensures efficient switching, reducing losses and enhancing circuit response time. This MOSFET meets the AEC-Q101 automotive standard, confirming its robustness and suitability for automotive electronic applications.

Applications include power management in electronic components, switching regulators, load drivers, and general Discrete Semiconductor uses in industrial and automotive electronics.

This MOSFET operates in enhancement mode for efficient switching. Maximum continuous drain current is rated at 17 amperes. Drain-source voltage can withstand up to 30 volts. Package type is TO-252 with a compact size of 6.7 mm length, 6.2 mm width, and 2.39 mm height.

Maximum power dissipation is 3.4 watts ensuring reliable operation. Maximum gate-source voltage rating is ±20 volts for enhanced control. Operating temperature range from -55°C to 150°C ensures wide application. Typical gate charge at Vgs is 59.2 nC optimizing switching speed.

Device is certified to AEC-Q101 automotive standard. Origin of product is China. This product is part of the MOSFET category at EnvMart, ideal for electronics engineers and designers requiring robust semiconductor components.