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Infineon N-Channel Inverter 1200 A 1200 V 10-Pin PRIME2 Surface Mount IGBT Module FF1200R12IE5PBPSA1

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Infineon N-Channel Inverter 1200 A 1200 V 10-Pin PRIME2 Surface Mount IGBT Module FF1200R12IE5PBPSA1

Name: Infineon N-Channel Inverter 1200 A 1200 V 10-Pin PRIME2 Surface Mount IGBT Module FF1200R12IE5PBPSA1
Brand: Infineon
SKU: 170458

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Category Semiconductors Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	22mm
Length	172mm
Model	FF1200R12IE5PBPSA1
Width	89mm
Mount Type	Surface
Series	FF1200R12IE5P
Maximum Operating Temperature	175°C
Package Type	PRIME2
Minimum Operating Temperature	-40°C
Pin Count	10
Maximum Continuous Collector Current Ic	1200A
Maximum Collector Emitter Voltage Vceo	1200V
Maximum Collector Emitter Saturation Voltage VceSAT	2.15V
Channel Type	N
Maximum Power Dissipation Pd	20mW
Maximum Gate Emitter Voltage VGEO	20 V
Number of Transistors	2

Key Features

Equipped with TRENCHSTOP IGBT5 and .XT interconnection technology for enhanced performance.
Supports both hard and soft switching applications including high power converters and UPS systems.
Copper bonds provide superior current carrying capabilities and reduce losses by up to 20%.
Designed for high power cycling capabilities with sintered chips for durability.
Operates efficiently at temperatures ranging from -40°C to 175°C for industrial reliability.
Compact surface mount design measuring 172mm length, 89mm width, and 22mm height.
Contains two transistors with a maximum gate emitter voltage of 20 V and saturation voltage of 2.15 V.
Suitable for applications in motor drives, solar inverters, and power electronics systems.

Product Description

Infineon FF1200R12IE5PBPSA1 N-Channel Inverter is a high-performance IGBT module designed for demanding industrial applications. It delivers a maximum continuous collector current of 1200 A and a collector emitter voltage rating of 1200 V, sealed in a robust 10-pin PRIME2 surface mount package. Developed with advanced TRENCHSTOP IGBT5 and .XT interconnection technology, this transistor module enhances power efficiency and reliability in various power conversion systems.

The module is engineered with copper bonds allowing high current carrying capability while minimizing total losses by up to 20%, which reduces cooling requirements for the same output power. Sintered chip technology ensures exceptional power cycling durability, enabling the device to withstand stringent thermal and mechanical stress. Operating temperature range from -40°C to 175°C expands its usability in harsh industrial environments.

This IGBT module is ideal for high power converters, UPS systems, motor drives, and solar power inverters where hard and soft switching techniques are employed. It features a maximum gate emitter voltage of 20 V and low collector emitter saturation voltage of 2.15 V, enhancing electrical performance.

Equipped with TRENCHSTOP IGBT5 and .XT interconnection technology for enhanced efficiency. Copper bonds for higher current carrying capabilities and improved thermal performance. Sintered chip design increases power cycling capability and reliability.

Wide operating temperature range from -40°C to 175°C. Compact PRIME2 package suitable for surface mounting in various electronic assemblies. Supports applications in motor drives, UPS systems, high power converters, and solar inverters.

Contains 2 transistors with maximum ratings suitable for demanding power electronic applications. It is part of the FF1200R12IE5P series. Explore our wide range of semiconductor modules, IGBTs, and power electronics components at EnvMart for industrial and laboratory applications.

Explore more products in our Semiconductors category.