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ROHM N-Channel MOSFET 9 A, 650 V Enhancement Mode, 3-Pin Surface Mount TO-252 R6509END3TL1
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 10.4mm |
| Length | 6.4mm |
| Model | R6509END3TL1 |
| Width | 2.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 585mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 94W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- This MOSFET features enhancement mode channel operation for efficient switching.
- Maximum power dissipation rating is 94 Watts to handle demanding applications.
- Low drain-source resistance of 585 milliohms ensures low conduction losses.
- Typical gate charge is 24 nanoCoulombs at 24 Volt gate-source voltage for fast switching.
- Operating temperature ranges from -55°C to 150°C for robust industrial use.
- Designed for surface mount assembly with 3 pins and TO-252 package type.
- RoHS compliant with lead-free plating, suitable for environmentally conscious applications.
Product Description
ROHM R6509END3TL1 is a high-performance N-Channel MOSFET designed for power switching and amplification in electronic circuits. Featuring a maximum continuous drain current of 9 A and a drain-source voltage rating of up to 650 V, this enhancement mode MOSFET provides reliable operation in demanding industrial and consumer electronic applications.
The device is packaged in a compact TO-252 surface mount format with 3 pins, facilitating efficient PCB layout for high-density assembly. With a low maximum on-resistance of 585 mΩ and a typical gate charge of only 24 nC at 24 V gate voltage, this MOSFET ensures fast switching speeds and minimal power losses, enhancing overall circuit efficiency.
Rated for continuous operation in temperature ranges from -55°C to 150°C, the R6509END3TL1 supports use in harsh environments including automotive, industrial, and power supply systems.
Additional features include Pb-free plating and RoHS compliance, enabling eco-friendly manufacturing and compliance with global environmental standards. This MOSFET features enhancement mode channel operation for efficient switching.
Maximum power dissipation rating of 94 Watts for sustained high power applications. Low on-resistance reduces heat generation and energy consumption. Compact TO-252 package suitable for surface mount technology (SMT). Wide operating temperature range supports industrial and automotive environments.
Three-pin configuration for simplified circuit integration. Complies with environmental directives with lead-free plating.
The R6509END3TL1 is ideal for use in power management, switch mode power supplies, motor control circuits, and other semiconductor applications requiring efficient high voltage, high current switching capabilities. It is particularly suited for environments requiring low noise and high switching speed.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 9 A.
This model has a maximum drain-source voltage rating of 650 V.
The maximum power dissipation rating is 94 Watts, suitable for demanding applications.
The typical gate charge is 24 nanoCoulombs at a 24 V gate-source voltage.
The operating temperature ranges from -55°C to 150°C, making it suitable for various environments.
It is packaged in a TO-252 surface mount format with 3 pins.
The maximum drain-source resistance is 585 milliohms, which helps reduce conduction losses.
The dimensions are 10.4 mm in height, 6.4 mm in length, and 2.4 mm in width.
Yes, this model is RoHS compliant with lead-free plating, suitable for environmentally conscious applications.
This MOSFET is suitable for power management, switch mode power supplies, and motor control circuits.
The channel type is N-Channel, designed for enhancement mode operation.
The maximum gate-source voltage is 20 V.
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