Vishay E Series N-Channel MOSFET 15 A, 800 V, Enhancement Mode, 3-Pin TO-220 SIHP17N80AE-GE3

Vishay SIHP17N80AE-GE3 is a high-performance E Series N-Channel MOSFET designed for demanding power applications. It is capable of handling a maximum continuous drain current of 15 A and a maximum drain-source voltage of 800 V. The enhancement-mode MOSFET in a robust 3-pin TO-220 package allows through-hole mounting and simplifies assembly in electronic circuits.

This device exhibits low on-resistance (Rds) of 250 mΩ, which minimizes conduction losses and enhances energy efficiency. The typical gate charge of 41 nC at Vgs ensures fast switching with reduced gate drive losses. It supports a maximum power dissipation of 179 W, beneficial for applications requiring thermal management with suitable heat sinks.

The MOSFET operates reliably over a wide temperature range from -55°C to 150°C, suitable for industrial, automotive, and power management electronics. The device's forward voltage of approximately 1.2 V further contributes to efficient switching characteristics.

Physically, the MOSFET has compact dimensions of 14.69 mm length, 9.96 mm width, and 4.24 mm height, enabling easy integration into power circuit boards. Its TO-220 package also facilitates effective heat dissipation under high power loads.

Common industrial use cases include power supplies, motor control, power converters, and switching regulators in manufacturing, electronics, and automation sectors. The through-hole mount and standard pin configuration ensure versatility and compatibility with a range of designs requiring robust discrete semiconductor devices.

The MOSFET supports a maximum continuous drain current of 15 A. It operates with a maximum drain-source voltage of 800 V. The package type is TO-220 suitable for through-hole mounting. The maximum power dissipation is rated at 179 W enabling efficient heat management.

It features a low drain-source resistance of 250 mΩ to reduce conduction losses. The device has a typical gate charge of 41 nC at Vgs. Maximum gate-source voltage is rated at ±30 V for reliable operation. Operational temperature range extends from -55°C to 150°C.

The forward voltage drop is approximately 1.2 V, optimizing switching efficiency. Compact physical dimensions include a length of 14.69 mm, width of 9.96 mm, and height of 4.24 mm. Explore the Vishay semiconductor range on EnvMart for reliable components suitable for power electronics and advanced circuit designs.

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