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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 46.5mm |
| Length | 20.2mm |
| Model | 2SA1943OTU |
| Width | 5.2mm |
| Mount Type | Through Hole |
| Series | 2SA1943 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-264 |
| Minimum Operating Temperature | -50°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -250V |
| Minimum DC Current Gain hFE | 55 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -250V |
| Maximum Power Dissipation Pd | 150W |
| Maximum DC Collector Current Idc | -17A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 30MHz |
onsemi 2SA1943OTU power PNP transistor is engineered for high power and reliable performance in electronic circuits requiring switching and amplification. Featuring a maximum DC collector current of 17 A and collector-emitter voltage of 250 V, this transistor supports demanding power applications with a maximum power dissipation of 150 W. It comes housed in a TO-264 3-pin package, which ensures excellent heat dissipation and mechanical stability for through-hole mounting on printed circuit boards.
The transistor's single configuration and PNP polarity make it suitable for complementary amplifier designs and switching circuits. It operates efficiently across a wide temperature range from -50°C to 150°C, making it apt for industrial environments. A minimum DC current gain (hFE) of 55 supports effective signal amplification, while a transition frequency of up to 30 MHz enables its use in moderate frequency switching and amplification tasks.
The compact dimensions (46.5 mm height, 20.2 mm length, and 5.2 mm width) facilitate integration in size-constrained designs. This transistor does not carry automotive standard or special certifications but meets general quality standards expected in power semiconductor components. It is ideal for various industrial, manufacturing, power supply, and electronic design applications requiring durable and efficient bipolar transistors.
Maximum collector current capacity of 17 Amperes. Collector-emitter voltage rating up to 250 Volts. Power dissipation capability of 150 Watts for high thermal performance. Single transistor configuration with PNP polarity.
Operates reliably between -50°C to 150°C temperature range. Minimum DC current gain (hFE) of 55 ensures good amplification. Maximum transition frequency of 30 MHz suitable for various power amplifier applications. Compact TO-264 package with dimensions approximately 46.5mm height and 5.2mm width.
Through-hole mount type enabling stable PCB installation. Suitable for industrial and power electronics applications requiring robust bipolar transistors. Explore more power semiconductor devices and detailed technical data on EnvMart to enhance your electronic component selection process.
Explore more products in our Discrete Semiconductor category.
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