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Vishay Silicon Junction Diode MiniMELF 250 mA 250 mV Single 2-Pin BAV103-GS08

Category Discrete Semiconductor Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 1.6mm
Length 3.7mm
Model BAV103-GS08
Width 1.6mm
Mount Type Surface
Maximum Operating Temperature 175°C
Case DO-204AL, molded epoxy over glass body
Package Type MiniMELF
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Polarity Color band denotes cathode end
Terminals Matte tin plated leads, solderable per
Pin Count 2
Maximum Power Dissipation Pd 500mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 1A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 50ns
Maximum Forward Current If 250mA
Maximum Peak Reverse Repetitive Voltage Vrrm 250mV

Key Features

  • High reliability cavity-free glass-passivated junction design.
  • Fast switching suitable for high efficiency applications.
  • Maximum forward current rating of 250 mA.
  • Peak reverse voltage rating of 250 mV to protect circuits.
  • Molded epoxy over glass body with DO-204AL case type.
  • Matte tin plated leads solderable per industry standards.
  • Operating temperature range from -65°C to 175°C.
  • Low leakage current typically less than 0.2 µA for energy efficiency.

Product Description

Vishay BAV103-GS08 is a single silicon junction diode in MiniMELF package featuring a cavity-free glass-passivated junction for high reliability and fast switching performance. It supports a maximum forward current of 250 mA and a peak reverse voltage of 250 mV, making it ideal for various electronic circuits requiring high efficiency and stable operation.

The diode’s robust molded epoxy over glass body with case type DO-204AL ensures excellent durability and compliance with UL 94 V-0 flammability rating. It includes matte tin-plated leads that are solderable per J-STD-002 and JESD 22-B102, ensuring reliable mechanical and electrical connection.

This diode exhibits a low leakage current typically below 0.2 µA and has a fast peak reverse recovery time of 50 ns, enhancing performance in switching applications. It operates effectively in the temperature range from -65°C to 175°C, suitable for industrial and consumer electronics environments.

Typical applications include high voltage rectification of G2 grid in CRT and TV devices, and use in snubber circuits for camera flashes. Its compact size (3.7 mm length, 1.6 mm width and height) and the polarity color band make it easy to integrate into PCBs.

Overall, the Vishay BAV103-GS08 diode provides reliable, energy-efficient switching solutions for electronic and industrial applications such as semiconductors manufacturing, consumer electronics, and electrical testing devices.

High reliability cavity-free glass-passivated junction design. Fast switching for high efficiency electronics. Maximum forward current rated at 250 mA. Compact MiniMELF package for PCB integration. Operating temperature from -65°C to 175°C.

Low typical leakage current below 0.2 µA. Color band denotes cathode polarity. Molded epoxy over glass construction, rated UL 94 V-0 flammability. Matte tin plated solderable leads. Applications in CRT G2 grid, camera flash snubber circuits.

Explore more Vishay semiconductor devices and discrete electronic components at EnvMart for reliable industrial and laboratory solutions.

Explore more products in our Discrete Semiconductor category.

Vishay Silicon Junction Diode MiniMELF 250 mA 250 mV Single 2-Pin BAV103-GS08
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