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onsemi P-Channel MOSFET, 130 mA, 50 V Enhancement Mode, 3-Pin SOT-23 Package BSS84

Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 3mm
Model BSS84
Width 1.3mm
Mount Type Surface
Series BSS84
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 130mA
Maximum Drain Source Voltage Vds 50V
Maximum Drain Source Resistance Rds 10Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 250mW
Typical Gate Charge Qg @ Vgs 0.9nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • Maximum continuous drain current of 130 mA ensures efficient operation.
  • Maximum drain to source voltage rated at 50 V for robust performance.
  • Enhancement mode channel with high-density DMOS technology for reliable switching.
  • Compact dimensions of 3 mm length, 1.3 mm width, and 1 mm height facilitate PCB space-saving.
  • Maximum power dissipation of 250 mW supports low power applications.
  • Wide operating temperature range from -65°C to 150°C for diverse environments.
  • Maximum gate-source voltage tolerance of ±20 V provides operational safety.
  • Automotive grade with standards AEC-Q100, AEC-Q101, and AEC-Q200 compliance.

Product Description

onsemi BSS84 is a high density cell P-Channel Enhancement Mode MOSFET semiconductor device designed for surface mount applications. With a package type of SOT-23 and 3 pins, it offers efficient voltage controlled switching and high saturation current achieved through ON Semiconductor’s proprietary DMOS technology. This technology minimizes on-state resistance for rugged and reliable performance, making it suitable for fast switching tasks.

The BSS84 MOSFET supports a maximum drain-source voltage of 50 V and a continuous drain current of 130 mA, with maximum power dissipation rated at 250 mW. Thanks to its compact package dimensions (length 3 mm, width 1.3 mm, height 1 mm), it is ideal for space-constrained printed circuit boards in industrial, automotive, and commercial electronic applications.

This device supports a wide temperature range from -65°C minimum to 150°C maximum operating temperature, complying with demanding automotive standards such as AEC-Q100, AEC-Q101, and AEC-Q200. Its maximum gate-source voltage tolerance of ±20 V ensures robust control and operational reliability.

Applications include load switching, DC/DC converter circuits, battery protection systems, power management control, and DC motor control. The MOSFET features a forward voltage of -1.2 V and a typical gate charge of 0.9 nC at the gate-source voltage, reflecting efficient switching performance.

Maximum continuous drain current is 130 mA for effective power handling. Maximum drain-source voltage 50 V ensuring robust operation under voltage stress. Enhancement mode channel using advanced DMOS technology for superior switching.

Compact SOT-23 surface mount package with 3 pins for easy PCB integration. Power dissipation up to 250 mW supporting low-power electronics. Automotive grade qualifications: AEC-Q100, AEC-Q101 and AEC-Q200 certified. Operating temperature range: -65°C to 150°C suitable for demanding environments.

Maximum gate-source voltage ±20 V for operational safety and control. Typical gate charge of 0.9 nC enabling fast switching characteristics. Applications include load switching, DC/DC converters, battery protection, and motor control.

Explore a wide range of semiconductor and MOSFET components at EnvMart for industrial electronic solutions and automotive grade electronics.

Explore more products in our Discrete Semiconductor category.

onsemi P-Channel MOSFET, 130 mA, 50 V Enhancement Mode, 3-Pin SOT-23 Package BSS84
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