Vishay Silicon Junction Common Anode Switching Diode 250 mA 1.25 V 350 mW 70 V SOT-23 BAW56-E3-08

Vishay BAW56-E3-08 is a silicon junction discrete semiconductor diode featuring a common anode configuration, suited for fast switching applications. It supports a maximum forward current of 250 mA and operates reliably across a broad temperature range from -65°C to 150°C. Packaged in a compact and robust SOT-23 surface mount package, it offers excellent power dissipation capability of 350 mW.

The diode is constructed with a cavity-free glass passivated junction, which enhances reliability and reduces leakage current to typically less than 0.2 microamperes. Its low forward voltage of 1.25 V helps in efficient rectification with minimal losses, making it ideal for high voltage applications such as grid CRTs, TV sets, or camera flash snubber circuits.

The device withstands peak non-repetitive forward surge currents up to 2 A, ensuring high surge capability during transient conditions. Terminals are matte tin plated, solderable per industrial standards (J-STD-002 and JESD22-B102), with a color band marking the cathode for correct orientation during assembly.

Mechanically, the diode case is DO-204AL type, molded with epoxy over a glass body, meeting UL 94 V-0 flammability rating standards to assure safety and material quality. This diode is compliant with RoHS standards and suitable for a wide range of industrial, consumer electronics, and lighting applications.

Common anode silicon junction diode in SOT-23 package. Fast switching for high efficiency electronic circuits. Supports forward current up to 250 mA with low forward voltage drop. Suitable for industrial and consumer electronics including CRT grids and camera flash circuits.

High reliability with glass passivated junction and robust epoxy molding. Range of approved soldering and handling standards supports manufacturing efficiency. Explore Vishay and related Discrete Semiconductor solutions on EnvMart for industrial and electronics manufacturing needs.