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Infineon IRFH N-Channel MOSFET 11 A 40 V 8-Pin PQFN Surface Mount IRL100HS121

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Infineon IRFH N-Channel MOSFET 11 A 40 V 8-Pin PQFN Surface Mount IRL100HS121

Name: Infineon IRFH N-Channel MOSFET 11 A 40 V 8-Pin PQFN Surface Mount IRL100HS121
Brand: Infineon
SKU: 179061
Price: 1.68 USD
Availability: InStock

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Category Discrete Semiconductor Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IRL100HS121
Mount Type	Surface
Series	IRFH
Maximum Operating Temperature	175°C
Package Type	PQFN
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	11A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	0.7mΩ
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

Designed for fast switching applications with low R DS(on) and optimized gate charge.
Supports a maximum power dissipation of 81 W for reliable operation under load.
Compact 2x2 mm PQFN package enables high power density and space savings.
Operates safely in temperatures from -55°C up to 175°C with automotive-grade reliability.
Compatible with logic level inputs, suitable for microcontroller-driven circuits.
Features a maximum gate-source voltage of 20 V to protect gate integrity.
Ideal for wireless charging, telecom, and adapter applications requiring efficiency.
Compliant with RoHS and automotive standard AEC-Q101 certifications.

Product Description

Infineon IRL100HS121 is an N-Channel Power MOSFET featuring a maximum continuous drain current rating of 11 A and maximum drain-source voltage of 40 V, contained in a compact 8-pin PQFN surface mount package. It is designed specifically for high-speed switching applications requiring high efficiency, low conduction losses, and compact form factor. The tiny 2x2 mm footprint supports space-constrained designs while enabling a higher power density.

This device has a low on-resistance of 0.7 mΩ, which reduces power loss and heat generation during operation. Its optimized typical gate charge of 80 nC and minimized output capacitances make it highly suitable for fast switching and PWM control, providing increased efficiency in telecom, wireless charging, and power adapter circuits.

The IRL100HS121 withstands operating temperatures ranging from -55°C to 175°C, and meets automotive AEC-Q101 qualification, making it suitable for automotive and industrial applications. The maximum gate-source voltage is specified at ±20 V to ensure safe gate drive and durability.

Key practical advantages include direct drive capability from microcontrollers at logic levels and reduced parts count in system design, which can decrease total system cost and size. The device is RoHS compliant for environmental and legal standards compliance.

Low R DS(on) x Q g figure of merit for efficient switching. Compact 2x2 mm PQFN package ideal for space-critical applications. High power dissipation rating supports challenging load conditions. Logic-level compatible for simple interfacing with low voltage drives.

Automotive standard AEC-Q101 qualified for reliability in harsh environments.

This MOSFET is widely used in industrial electronics, telecommunications, power adapters, wireless charging platforms, and automotive power control circuits. EnvMart offers this reliable semiconductor device suited for professionals and engineers aiming to optimize efficiency and performance in compact electronic solutions.

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