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onsemi PowerTrench Type P-Channel MOSFET, 2 A, 30 V, Enhancement, 3-Pin SOT-23 FDN360P

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onsemi PowerTrench Type P-Channel MOSFET, 2 A, 30 V, Enhancement, 3-Pin SOT-23 FDN360P

Name: onsemi PowerTrench Type P-Channel MOSFET, 2 A, 30 V, Enhancement, 3-Pin SOT-23 FDN360P
Brand: onsemi
SKU: 207534
Price: 0.26 USD
Availability: InStock

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Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	940μm
Length	2.92mm
Model	FDN360P
Width	1.4mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	2A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	80mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	6.2nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.2V

Key Features

Enhanced PowerTrench technology ensures high efficiency and power density.
Maximum power dissipation of 500 mW suitable for low-power applications.
Low drain-source resistance of 80 milliohms reduces conduction losses.
Operating temperature range from -55°C to 150°C ensures reliability in harsh environments.
Maximum gate-source voltage of ±20 V for robust gate control.
Typical gate charge of 6.2 nC enables fast switching performance.
Soft reverse recovery body diode reduces switching noise and eliminates snubber circuits.

Product Description

onsemi FDN360P PowerTrench Type P-Channel MOSFET is engineered for efficient power switching in electronic circuits and semiconductor applications. This enhancement-mode transistor is optimized for surface mount technology with a space-saving 3-pin SOT-23 package.

The device features a maximum continuous drain current rating of 2 amperes and a drain-source voltage rating of 30 volts, making it suitable for various low-voltage power management tasks. The low on-resistance of 80 milliohms allows for reduced power losses and improved thermal performance in demanding electronic environments.

Its extended operating temperature range from -55°C to 150°C ensures stable operation in industrial, automotive, and consumer electronics sectors. The typical gate charge of 6.2 nanocoulombs facilitates rapid switching, suitable for synchronous rectification and low-noise power converters.

The innovative shielded-gate structure integral to the PowerTrench design advances the figure of merit (FOM) by minimizing gate charge and switching losses. Additionally, its soft body diode characteristic mitigates the need for external snubber circuits, enhancing overall circuit efficiency.

Compact physical dimensions (2.92 mm length, 1.4 mm width, and 940 μm height) further support integration into densely packed boards, aiding manufacturing and assembly processes. Enhanced PowerTrench technology provides efficient power conversion.

Low on-resistance minimizes conduction losses. Wide operating temperature range supports diverse industrial applications. Fast switching enabled by low typical gate charge. Soft reverse recovery diode reduces electromagnetic interference.

Compact SOT-23 package for space-saving circuit designs. Robust gate-source voltage tolerance ensures device protection. Suitable for industrial, automotive, laboratory, and commercial electronic uses.

This MOSFET is an ideal choice for applications requiring high-efficiency power switching and compact size, including power management in consumer electronics, automotive control circuits, and industrial automation equipment.

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