onsemi N-Channel Enhancement MOSFET 500 mA 60 V 3-Pin TO-92 BS170

onsemi BS170 is an N-Channel Enhancement Mode MOSFET, packaged in a 3-pin TO-92 through-hole configuration, capable of handling a continuous drain current up to 500 mA and voltage rating of 60 V. The device utilizes advanced DMOS technology to ensure low on-resistance and robust performance in various electronic circuits.

This transistor is designed for applications requiring efficient switching and amplification, supporting maximum power dissipation of 830 mW and operating across a broad temperature range from -55°C to 150°C, suitable for industrial and commercial uses.

The enhancement mode operation allows reliable switching control with a maximum gate-source voltage of ±20 V and a forward voltage of approximately 600 mV. The typical gate charge of 1.6 nC contributes to fast switching capabilities, making it ideal for power management circuits and electronic control systems.

Physically, the device measures 5.2 mm in length, 4.19 mm in width, and 5.33 mm in height, making it compatible with common PCB layouts. The TO-92 package type ensures easy mounting with through-hole pins.

High density DMOS technology minimizes on-resistance and ensures ruggedness. Low forward voltage optimizes energy efficiency in switching applications. Wide operating temperature range enables reliability in harsh environments.

Compact TO-92 packaging supports standard PCB integration. Suitable for use in industrial controls, power supplies, and general-purpose switching circuits.

The onsemi BS170 MOSFET is an essential component for electronic designers and engineers seeking a reliable, high-frequency transistor for low power switching applications. Browse our extensive semiconductor catalog at EnvMart to discover compatible electronic components and industrial solutions.

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