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Infineon Dual HEXFET 2 N-Channel Power MOSFET 9.1 A 30 V Enhancement Mode 8-Pin SOIC IRF7907TRPBF

Category Discrete Semiconductor Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.5mm
Length 5mm
Model IRF7907TRPBF
Width 4mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 2
Channel Type N
Maximum Continuous Drain Current Id 9.1A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 20.5mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2W
Typical Gate Charge Qg @ Vgs 14nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1V
Transistor Configuration Dual

Key Features

  • Dual N-channel power MOSFET with enhancement mode operation for efficient switching.
  • Maximum continuous drain current of 9.1 A supports high-power applications.
  • Low maximum drain-source resistance of 20.5 mΩ reduces conduction losses.
  • Compact 8-pin SOIC surface-mount package suitable for dense PCB designs.
  • Supports operating temperatures from -55°C up to 150°C for reliable industrial use.
  • Typical gate charge of 14 nC ensures fast switching performance.
  • Maximum power dissipation rated at 2 W for moderate thermal management.
  • Forward voltage drop of 1 V enhances energy efficiency in circuits.

Product Description

Infineon IRF7907TRPBF Dual HEXFET 2 N-Channel Power MOSFET is a high-performance semiconductor device with a continuous drain current capability of 9.1 A and maximum drain-source voltage of 30 V. This enhancement mode transistor comes in a compact 8-pin SOIC surface mount package designed to meet demanding electrical and thermal specifications.

The MOSFET features a dual transistor configuration, integrating two N-channel elements per chip, which provides high efficiency and compactness. With a maximum drain-source resistance of only 20.5 mΩ, this device minimizes conduction losses, making it ideal for energy-sensitive power management applications.

Designed to operate reliably over a wide temperature range from -55°C to 150°C, it supports various industrial and commercial sectors requiring durable MOSFET solutions. The device’s 14 nC typical gate charge supports fast switching, beneficial for high-frequency electronic circuits.

Additional features include a maximum power dissipation of 2 W and a forward voltage of 1 V, balancing power handling with energy efficiency. The surface-mount SOIC package accommodates modern PCB layouts while simplifying assembly processes.

Common applications include industrial power control, switching regulators, motor drives, and power conversion systems within industrial electronics and semiconductor device markets.

Dual N-channel enhancement mode MOSFET ensures high efficiency. Continuous drain current of 9.1 A for robust power handling. Maximum drain-source voltage of 30 V for compatibility with low-voltage systems. Compact 8-pin SOIC surface mount package suitable for dense circuits.

Wide operating temperature range from -55°C to 150°C for harsh environments. Low gate charge optimizes switching speed and reduces losses. Moderate power dissipation rating of 2 W supports thermal management. Ideal for power management, industrial electronics, and switching applications.

Explore the extensive range of Infineon semiconductors in the Electronics & Electricals category at EnvMart for reliable, efficient component solutions.

Explore more products in our Discrete Semiconductor category.

Infineon Dual HEXFET 2 N-Channel Power MOSFET 9.1 A 30 V Enhancement Mode 8-Pin SOIC IRF7907TRPBF
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