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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF7907TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.1A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 20.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
| Transistor Configuration | Dual |
Infineon IRF7907TRPBF Dual HEXFET 2 N-Channel Power MOSFET is a high-performance semiconductor device with a continuous drain current capability of 9.1 A and maximum drain-source voltage of 30 V. This enhancement mode transistor comes in a compact 8-pin SOIC surface mount package designed to meet demanding electrical and thermal specifications.
The MOSFET features a dual transistor configuration, integrating two N-channel elements per chip, which provides high efficiency and compactness. With a maximum drain-source resistance of only 20.5 mΩ, this device minimizes conduction losses, making it ideal for energy-sensitive power management applications.
Designed to operate reliably over a wide temperature range from -55°C to 150°C, it supports various industrial and commercial sectors requiring durable MOSFET solutions. The device’s 14 nC typical gate charge supports fast switching, beneficial for high-frequency electronic circuits.
Additional features include a maximum power dissipation of 2 W and a forward voltage of 1 V, balancing power handling with energy efficiency. The surface-mount SOIC package accommodates modern PCB layouts while simplifying assembly processes.
Common applications include industrial power control, switching regulators, motor drives, and power conversion systems within industrial electronics and semiconductor device markets.
Dual N-channel enhancement mode MOSFET ensures high efficiency. Continuous drain current of 9.1 A for robust power handling. Maximum drain-source voltage of 30 V for compatibility with low-voltage systems. Compact 8-pin SOIC surface mount package suitable for dense circuits.
Wide operating temperature range from -55°C to 150°C for harsh environments. Low gate charge optimizes switching speed and reduces losses. Moderate power dissipation rating of 2 W supports thermal management. Ideal for power management, industrial electronics, and switching applications.
Explore the extensive range of Infineon semiconductors in the Electronics & Electricals category at EnvMart for reliable, efficient component solutions.
Explore more products in our Discrete Semiconductor category.
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