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Vishay Silicon Junction Fast Switching Diode 300 mA 75 V DO-35 Through Hole 1N4148-TAP

Category Discrete Semiconductor Brand Vishay Condition New

Specifications

Country of Origin India
Diameter 1.75mm
Brand Vishay
Height 1.7mm
Length 3.4mm
Model 1N4148-TAP
Width 1.7mm
Mount Type Through Hole
Series 1N4148
Maximum Operating Temperature 175°C
Case DO-204AL, molded epoxy over glass body
Package Type DO-35
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Polarity Color band denotes cathode end
Terminals Matte tin plated leads, solderable per
Pin Count 2
Maximum Power Dissipation Pd 500mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 300mA
Maximum Peak Reverse Repetitive Voltage Vrrm 75V

Key Features

  • Glass passivated junction for high reliability.
  • Fast switching diode with 4 ns peak reverse recovery time.
  • Low leakage current typically less than 0.2 µA.
  • Maximum forward current of 300 mA and reverse voltage of 75 V.
  • DO-35 through hole package with molded epoxy over glass body.
  • Operating temperature range from -65°C to 175°C.
  • High forward surge capability of 2 A.
  • Matte tin plated leads solderable per industry standards.

Product Description

Vishay 1N4148-TAP is a silicon junction switching diode designed for fast switching in electronic circuits requiring reliable performance. This diode supports a maximum forward current of 300 mA and can withstand peak reverse repetitive voltage up to 75 V, making it suitable for various signal processing and rectification tasks in electronic devices.

The device features a glass passivated junction and a cavity-free structure for enhanced reliability and durability in industrial and commercial applications. The DO-35 package consists of a molded epoxy case over a glass body, providing mechanical strength and thermal stability. With a low forward voltage of typically 1 V and minimal leakage current under 0.2 µA, it offers efficient switching performance with low power loss.

Operating at temperatures from -65°C up to 175°C, this diode is well-suited for demanding environments including industrial automation, communication equipment, laboratory instruments, and consumer electronics. It features a fast peak reverse recovery time of 4 ns, enabling efficient operation in high-frequency circuits such as snubber circuits used in camera flashes or CRT grid rectification.

The diode has matte tin-plated leads compliant with industry soldering standards, facilitating straightforward PCB assembly and integration. The terminal polarity is clearly marked by a color band indicating the cathode end, ensuring correct orientation during installation.

Typical applications include high voltage rectification of G2 grid CRTs and TVs, snubber circuits for camera flashes, and various other fast switching circuit requirements. Its robust construction and reliable performance with industry compliance make it a versatile discrete semiconductor component for electronics manufacturing and repair.

Glass passivated junction for high reliability. Fast switching for high efficiency with 4 ns recovery time. Low leakage current typically less than 0.2 µA. High forward surge capability of 2 A. DO-35 molded epoxy package with UL 94 V-0 flammability rating.

Operating temperature range of -65°C to 175°C. Matte tin plated leads solderable per J-STD-002 and JESD 22-B102. Color band denotes cathode end for correct polarity.

This diode is ideal for use in industrial, laboratory, HVAC, manufacturing, and commercial electronics applications requiring fast and reliable switching performance. Browse the Vishay brand and Discrete Semiconductor category on EnvMart for related components and diode solutions.

Vishay Silicon Junction Fast Switching Diode 300 mA 75 V DO-35 Through Hole 1N4148-TAP
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