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Infineon OptiMOS-T N-Channel MOSFET 160 A 40 V Enhancement Surface Mount 7-Pin TO-263 IPB160N04S203ATMA4
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB160N04S203ATMA4 |
| Mount Type | Surface |
| Series | OptiMOS-T |
| Package Type | TO-263 |
| Pin Count | 7 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 160A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.9mΩ |
| Channel Mode | Enhancement |
Key Features
- Designed with OptiMOS-T series for enhanced energy efficiency and power density.
- Surface mount package ensures compact assembly and easy PCB integration.
- Low maximum drain-source resistance of 2.9 milliohms reduces conduction losses.
- Channel mode is enhancement type ensuring reliable switching performance.
- Automotive grade compliant with AEC-Q101 standard for high reliability.
- Supports 175°C maximum operating temperature for demanding applications.
- 100% avalanche tested for robust transient handling capability.
- Ideal for computing voltage regulation and power management applications.
Product Description
Infineon IPB160N04S203ATMA4 OptiMOS-T N-Channel MOSFET is a high-performance semiconductor device designed for demanding industrial and automotive applications. Featuring a maximum continuous drain current rating of 160 amperes and a drain-source voltage of 40 volts, this device operates efficiently in power regulation and switching circuits.
Housed in a compact TO-263 7-pin surface mount package, the MOSFET offers excellent thermal performance and is suitable for PCB mount designs with space constraints. The device is based on the enhancement channel mode providing superior switching characteristics and reduced on-resistance at just 2.9 milliohms.
Qualified to the automotive AEC-Q101 standard, the MOSFET ensures high reliability and long service life under rigorous operating conditions including temperature extremes up to 175°C and transient avalanche events. This makes it ideal for automotive power management, voltage regulation modules in computing, industrial control systems, and other power electronics requiring robust, energy-efficient semiconductor components.
OptiMOS-T series technology for high power density and efficiency. 7-pin TO-263 surface mount package for optimized thermal dissipation. Enhancement mode N-channel type for reliable switching. 160 A continuous drain current capacity at 40 V drain-source voltage.
Low 2.9 mΩ Rds(on) minimizes conduction losses and heat generation. Automotive standard AEC-Q101 qualified for high reliability. Supports ambient temperatures up to 175°C and 100% avalanche tested for ruggedness. Applications include computing voltage regulation, automotive electronics, power management, and industrial equipment.
This Infineon MOSFET is an essential component in energy-conscious industrial designs and automotive electronics where efficiency, reliability, and compact form factor are critical. It is a proven solution ensuring optimal power conversion and regulation.
Browse more Discrete Semiconductor products from Infineon and explore the full portfolio of OptiMOS series for your industrial and automotive power electronics needs on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 160 amperes.
This MOSFET has a maximum drain-source voltage of 40 volts.
It is housed in a TO-263 surface mount package.
The maximum drain-source resistance is 2.9 milliohms.
It is qualified to the AEC-Q101 automotive standard for high reliability.
This model features an N-channel type configuration.
It supports a maximum operating temperature of 175°C.
It is ideal for automotive power management, voltage regulation modules in computing, and industrial control systems.
The TO-263 package has 7 pins.
The channel operates in enhancement mode, providing reliable switching performance.
The country of origin for this product is India.
It utilizes OptiMOS-T series technology for enhanced energy efficiency and power density.
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