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onsemi Single N-Channel Switch JFET 2 mA, 3-Pin SOT-23 MMBFJ113

Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.93mm
Length 2.92mm
Model MMBFJ113
Width 1.3mm
Mount Type Surface
Configuration Single
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type N-Channel Switch
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Drain Source Resistance Rds 100Ω
Maximum Power Dissipation Pd 350mW
Maximum Gate Source Voltage Vgs -35V
Drain Source Current Ids 2 mA

Key Features

  • This JFET features a maximum power dissipation of 350 milliwatts.
  • It has a low drain-source resistance (Rds) of 100 ohms.
  • The device operates with a drain-source current rating of 2 mA.
  • Designed for a temperature range from -55°C to 150°C operating conditions.
  • It features a maximum gate-source voltage of -35 V, ensuring robust gate protection.
  • The compact SOT-23 package with 3 pins allows for easy surface mounting on PCBs.
  • Physical dimensions are small with length 2.92 mm, width 1.3 mm, and height 0.93 mm suitable for compact designs.
  • No automotive certification but suited for general industrial and electronic applications.

Product Description

onsemi MMBFJ113 is a single N-channel JFET transistor housed in a 3-pin SOT-23 surface-mount package ideal for electronic circuit switching and amplification functions requiring low noise and high input impedance.

This device supports a maximum power dissipation of 350 milliwatts, making it suitable for low power applications including signal switching and amplification in industrial, laboratory, and consumer electronics.

The MMBFJ113 transistor ensures a maximum drain-source resistance of 100 ohms and a drain-source current capability of 2 milliamps, combined with a gate-source voltage tolerance up to -35 volts, enabling reliable operation in varying circuit designs.

The device operates effectively in a broad temperature range from -55°C to 150°C, providing robustness in harsh environments commonly encountered in industrial and automotive electronics, although it does not carry specific automotive certification.

Measuring only 2.92 mm in length, 1.3 mm in width, and 0.93 mm in height, the SOT-23 packaging facilitates compact printed circuit board layouts while ensuring ease of automated surface mount assembly.

Maximum power dissipation of 350 mW for low power switching tasks. Low drain-source resistance (100 Ω) for efficient conduction. Drain-source current rating of 2 mA suitable for signal control. Wide operating temperature range from -55°C to 150°C for reliable performance.

Gate-source voltage maximum of -35 V offering gate protection. Small 3-pin SOT-23 package for surface mounting convenience. Ideal for industrial, laboratory, consumer electronics, and PCB designs.

This product is essential for engineers and designers seeking a reliable, low-current, single N-channel JFET switch for various electronic applications. Explore more products in the Discrete Semiconductors category at EnvMart.

onsemi Single N-Channel Switch JFET 2 mA, 3-Pin SOT-23 MMBFJ113
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Frequently Asked Questions

The maximum power dissipation of this JFET is 350 milliwatts.

This model has a drain-source current rating of 2 mA.

The maximum gate-source voltage is -35 V, providing robust gate protection.

It features a maximum drain-source resistance (Rds) of 100 ohms.

This JFET operates effectively within a temperature range from -55°C to 150°C.

The dimensions of the SOT-23 package are 2.92 mm in length, 1.3 mm in width, and 0.93 mm in height.

This model has a 3-pin configuration.

It is designed for surface mounting on printed circuit boards (PCBs).

It is suitable for general industrial and electronic applications, including signal switching and amplification.

This model does not carry specific automotive certification but is suited for industrial and electronic applications.

The MMBFJ113 is a single N-channel JFET transistor.

The country of origin for this JFET is India.

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