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Infineon High-Voltage N-Channel MOSFET 150 V, 114 A Continuous Drain Current, 9.2 mΩ RDS(on), SuperSO8 5x6 BSC074N15NS5ATMA1

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Infineon High-Voltage N-Channel MOSFET 150 V, 114 A Continuous Drain Current, 9.2 mΩ RDS(on), SuperSO8 5x6 BSC074N15NS5ATMA1

Name: Infineon High-Voltage N-Channel MOSFET 150 V, 114 A Continuous Drain Current, 9.2 mΩ RDS(on), SuperSO8 5x6 BSC074N15NS5ATMA1
Brand: Infineon
SKU: 173268
Price: 6.93 USD
Availability: InStock

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Category Discrete Semiconductor Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.2mm
Length	5.35mm
Model	BSC074N15NS5ATMA1
Width	6.1mm
Mount Type	Surface
Series	BSC
Maximum Operating Temperature	150°C
Package Type	SuperSO8 5 x 6
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	114A
Maximum Drain Source Voltage Vds	150V
Maximum Drain Source Resistance Rds	9.2mΩ
Channel Mode	N
Maximum Power Dissipation Pd	46W
Typical Gate Charge Qg @ Vgs	10nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

Features a low on-resistance of 9.2 milliohms to minimize conduction losses.
Supports surface mount assembly in an 8-pin SuperSO8 5x6 package.
Operates efficiently in ambient temperatures from -55°C to 150°C.
Offers a maximum power dissipation of 46 W for sustained thermal performance.
Typical gate charge of 10 nC reduces switching energy losses.
Maximum gate to source voltage of 20 V allows flexible gate drive options.
Suitable for DC-DC converters, synchronous rectifiers, motor controllers, telecom power modules, and high-voltage industrial switching.

Product Description

Infineon BSC074N15NS5ATMA1 N-channel MOSFET is engineered for high-voltage switching applications, featuring a 150 V drain source voltage and a continuous drain current capacity of 114 A. The device utilizes a surface-mount 8-pin SuperSO8 5x6 package ensuring compactness and ease of mounting on PCBs.

This MOSFET provides efficient operation with a low on-resistance of 9.2 milliohms, which reduces conduction losses. It supports a wide temperature range from -55 °C to 150 °C and a maximum power dissipation of 46 W, enabling robust thermal management in demanding electrical and electronic systems.

The gate control is optimized with a typical gate charge of 10 nC and a gate-source voltage tolerance up to 20 V, favoring versatile gate-driving circuit designs. The forward voltage under typical conditions is 1.2 V, contributing to operational efficiency.

Physical package dimensions are 5.35 mm length by 6.1 mm width and a height of 1.2 mm, suitable for high density PCB layouts in industrial, telecommunications, and power supply applications.

Low on-resistance at 9.2 mΩ reduces power loss during conduction. High continuous current capacity supports demanding load conditions. Wide operating temperature range ensures reliability under harsh environments. Compact SuperSO8 package aids in miniaturized designs.

High maximum power dissipation enables sustained performance. Flexible gate drive voltage up to 20 V allows various control schemes. Ideal for synchronous rectification and motor control circuits. Suitable for industrial and telecom power distribution modules.

This MOSFET is widely applicable in power electronics including DC-DC converters, motor controllers, and high-voltage switches in industrial systems. It is designed to deliver efficiency, thermal stability, and reliable performance in demanding electrical circuits.

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