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onsemi N-Channel MOSFET 340 mA 60 V Enhancement Mode 3-Pin SC-70 Package 2N7002WT1G

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onsemi N-Channel MOSFET 340 mA 60 V Enhancement Mode 3-Pin SC-70 Package 2N7002WT1G

Name: onsemi N-Channel MOSFET 340 mA 60 V Enhancement Mode 3-Pin SC-70 Package 2N7002WT1G
Brand: onsemi
SKU: 369248
Price: 0.04 USD
Availability: InStock

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Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	900μm
Length	2.2mm
Model	2N7002WT1G
Width	1.35mm
Mount Type	Surface
Series	2N7002W
Maximum Operating Temperature	150°C
Package Type	SC-70
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	340mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	2.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	330mW
Typical Gate Charge Qg @ Vgs	0.7nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	880mV
N-Channel MOSFET Transistor, 340 mA, 60 V, 3-Pin SOT-323 onsemi 2N7002WGBrand	ON Semiconductor

Key Features

This MOSFET operates in enhancement mode with a channel type N.
It features a maximum drain-source resistance of 2.5 ohms.
Supports a typical gate charge of 0.7 nC at Vgs.
Designed for surface mounting on PCBs with a pin count of 3.
Can operate between temperatures of -55°C to 150°C.
Maximum power dissipation capacity is 330 mW.
Complies with the automotive standard AEC-Q101, suitable for automotive applications.
Compact dimensions include length 2.2 mm, width 1.35 mm, and height 900 µm.

Product Description

onsemi 2N7002WT1G is an N-Channel MOSFET designed for electronic components applications requiring efficient switching performance. It supports a maximum continuous drain current of 340 mA and can tolerate drain-source voltages up to 60 V. Housed in a compact 3-pin SC-70 package, it is ideal for surface mounting on printed circuit boards.

This device operates in enhancement mode, providing reliable switching characteristics with a maximum drain-source resistance of 2.5 ohms. It features a typical gate charge of 0.7 nC at the gate-source voltage, enabling efficient low-power gate drives. The MOSFET supports gate-source voltages ranging from -20 V to +20 V, enhancing its robustness.

Rated for a maximum power dissipation of 330 mW, the 2N7002WT1G can operate safely across a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial and automotive environments. It meets the automotive AEC-Q101 standard, ensuring reliability and quality required for automotive electronics.

Its compact physical dimensions of 2.2 mm length, 1.35 mm width, and 900 µm height make this component suitable for densely packed electronic systems and small-scale industrial electronics.

This MOSFET operates in enhancement mode with a channel type N. Maximum continuous drain current is 340 mA. Maximum drain-source voltage is 60 V. Compact SC-70 package with 3 pins designed for surface mount. Maximum power dissipation is 330 mW.

Operating temperature range from -55°C to 150°C. Typical gate charge of 0.7 nC. Compliant with AEC-Q101 automotive standard.

Ideal for applications in electronic components, power management, automotive electronics, and discrete semiconductor uses. The onsemi 2N7002WT1G MOSFET delivers reliable performance in switching and amplification roles.

Browse the Electronics & Electricals category for Discrete Semiconductors and find compatible MOSFET devices for your engineering and manufacturing needs at EnvMart.