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DiodesZetex Silicon Junction Switching Diode Single 400 mA 100 V SOD-123 BAV20W-7-F

Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.35mm
Length 2.85mm
Model BAV20W-7-F
Width 1.7mm
Mount Type Surface
Series BAV20W
Maximum Operating Temperature 150°C
Package Type SOD-123
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Power Dissipation Pd 250mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 2.5A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 50ns
Maximum Forward Current If 400mA
Maximum Peak Reverse Repetitive Voltage Vrrm 100V

Key Features

  • This diode has a maximum forward current of 400 mA suitable for low power circuits.
  • It features a maximum peak reverse voltage of 100 V ensuring reliable blocking capability.
  • The package type is SOD-123 with a compact surface mount design with 2 pins.
  • The maximum power dissipation is rated at 250 mW supporting safe thermal operation.
  • Peak reverse recovery time is 50 ns providing fast switching performance.
  • The diode operates reliably between temperatures of -65°C to 150°C for varied environments.
  • Maximum forward voltage drop is 1.25 V ensuring low conduction losses.
  • Designed without automotive certification and manufactured in China.

Product Description

DiodesZetex BAV20W-7-F is a single silicon junction switching diode designed for use in low power signal switching applications. It can handle a maximum forward current of 400 mA and sustain peak reverse voltages up to 100 V. Encapsulated in a surface mount SOD-123 package with 2 pins, it supports compact and efficient PCB layouts.

This diode offers a maximum power dissipation of 250 mW, ensuring safe operation under moderate thermal loads. The fast peak reverse recovery time of 50 ns allows for rapid switching in high-frequency circuits. It functions reliably across a wide temperature range from -65°C to 150°C, suitable for diverse industrial, communication, and electronic applications.

With a low forward voltage drop of 1.25 V, the diode contributes to minimizing power losses in circuits. The compact dimensions (2.85 mm by 1.7 mm and height 1.35 mm) enable dense packing on printed circuit boards. Despite its lack of automotive standard certification, this component is commonly used in electronic and electrical discrete semiconductor assemblies.

Manufactured in China, the BAV20W-7-F diode is ideal for applications in industrial control, telecommunications, instrumentation, consumer electronics, and embedded system designs. Its reliable surface mount form factor and proven switching performance make it a versatile component in prototyping and volume production.

Key features of the DiodesZetex BAV20W-7-F diode include excellent switching speed, compact size, and robust electrical ratings. Engineers and designers can incorporate this diode to improve circuit efficiency and switch performance in power-sensitive environments.

This diode has a maximum forward current of 400 mA suitable for low power circuits. It features a maximum peak reverse voltage of 100 V ensuring reliable blocking capability. The package type is SOD-123 with a compact surface mount design with 2 pins.

The maximum power dissipation is rated at 250 mW supporting safe thermal operation. Peak reverse recovery time is 50 ns providing fast switching performance. The diode operates reliably between temperatures of -65°C to 150°C for varied environments.

Maximum forward voltage drop is 1.25 V ensuring low conduction losses. Dimensions are 2.85 mm length, 1.7 mm width and 1.35 mm height for PCB footprint planning. Designed without automotive certification and manufactured in China.

Browse the Electronics & Electricals category at EnvMart for more discrete semiconductor and diode components to support your projects.

Explore more products in our Switching Diodes category.

DiodesZetex Silicon Junction Switching Diode Single 400 mA 100 V SOD-123 BAV20W-7-F
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Frequently Asked Questions

The maximum forward current of this diode is 400 mA, making it suitable for low power circuits.

It has a maximum peak reverse voltage rating of 100 V, ensuring reliable blocking capability.

This diode is encapsulated in a surface mount SOD-123 package, which features a compact design with 2 pins.

The maximum power dissipation for the BAV20W-7-F is rated at 250 mW, supporting safe thermal operation.

The peak reverse recovery time is 50 ns, providing fast switching performance in high-frequency circuits.

The dimensions are 2.85 mm in length, 1.7 mm in width, and 1.35 mm in height, suitable for PCB footprint planning.

This model operates reliably between temperatures of -65°C to 150°C, making it suitable for varied environments.

The maximum forward voltage drop is 1.25 V, which helps minimize conduction losses in circuits.

It is commonly used in industrial control, telecommunications, instrumentation, consumer electronics, and embedded system designs.

The diode configuration is single, designed for use in low power signal switching applications.

This diode is manufactured in China.

The peak non-repetitive forward surge current rating is 2.5 A.

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