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Infineon CoolMOS N-Channel MOSFET, 106 A, 700 V, 4-Pin TO-247-4 IPZA65R018CFD7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 15.9mm |
| Model | IPZA65R018CFD7XKSA1 |
| Width | 5.1mm |
| Mount Type | Through Hole |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247-4 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 106A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 18mΩ |
| Maximum Power Dissipation Pd | 446W |
| Typical Gate Charge Qg @ Vgs | 234nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- This MOSFET features a maximum continuous drain current of 106 amperes.
- It supports a maximum drain-source voltage of 700 volts.
- The device has a low maximum drain-source resistance of 18 milliohms.
- Offers a high maximum power dissipation capability of 446 watts.
- Operates reliably in a temperature range from -55°C to 150°C.
- Typical gate charge is 234 nC at Vgs, ensuring efficient switching.
- Equipped with a maximum gate-source voltage tolerance of 20 volts.
- Includes integrated fast body diode enhancing switching performance.
Product Description
Infineon IPZA65R018CFD7XKSA1 is a CoolMOS N-Channel MOSFET optimized for resonant high power topologies commonly used in industrial environments, including server, telecom, solar energy systems, and electric vehicle charging stations. With a maximum continuous drain current of 106 A and a drain-source voltage rating of 700 V, this device facilitates significant efficiency improvements and enhanced power density.
The MOSFET incorporates an integrated fast body diode making it ideal for demanding switching applications. It exhibits excellent hard-commutation ruggedness and extra safety margin supports designs with increased bus voltage, ensuring reliability under harsh operating conditions.
The device features a low on-resistance of 18 mΩ, enabling superior conduction efficiency and reduced power losses. It sustains a maximum power dissipation of 446 W and operates effectively in a wide temperature range from -55°C minimum to 150°C maximum, suitable for industrial applications requiring robust thermal performance.
Typical gate charge is 234 nC at gate-source voltage, supporting fast switching speeds while minimizing switching losses. The maximum gate-source voltage rating is 20 V. The product is housed in a durable 4-pin TO-247-4 package with through-hole mounting compatibility, measuring 15.9 mm in length, 5.1 mm in width, and 21.1 mm in height.
Applications include industrial power conversion, switch-mode power supplies, solar inverters, telecom equipment, and EV charging infrastructures where high efficiency and reliability are critical.
This MOSFET offers excellent power density suitable for advanced industrial systems. Its integrated fast body diode improves switching performance in resonant topologies. Robust design ensures extended operational life and reliability.
Compact package supports easy integration into through-hole PCB designs. Ideal for improving performance in solar energy and EV charging applications. Explore the full range of semiconductors and power devices in EnvMart for your industrial and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current is 106 amperes.
This model supports a maximum drain-source voltage of 700 volts.
It has a low maximum drain-source resistance of 18 milliohms.
The device can handle a maximum power dissipation of 446 watts.
It operates reliably in a temperature range from -55°C to 150°C.
The typical gate charge is 234 nC at gate-source voltage.
The maximum gate-source voltage tolerance is 20 volts.
It is housed in a 4-pin TO-247-4 package with through-hole mounting compatibility.
The dimensions are 15.9 mm in length, 5.1 mm in width, and 21.1 mm in height.
It is suitable for applications in industrial power conversion, switch-mode power supplies, solar inverters, telecom equipment, and EV charging infrastructures.
This model features an N-channel configuration.
The country of origin is India.
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