onsemi N-Channel MOSFET 2.2 A 60 V Enhancement 3-Pin SOT-23 NTR5198NLT1G

onsemi NTR5198NLT1G is an N-Channel MOSFET transistor engineered for efficient power switching and amplification. This enhancement mode MOSFET provides a maximum continuous drain current of 2.2 A and can handle drain-source voltages up to 60 V, ensuring reliable performance in low-to-medium power circuits.

The device utilizes a surface mount 3-pin SOT-23 package, making it suitable for compact PCB designs requiring minimal space. It features a maximum drain-source resistance (Rds) of 155 milliohms, enabling low conduction losses.

Capable of operating within a wide temperature range from -55°C up to 150°C, the MOSFET offers robust environmental tolerance for industrial, electronic component assembly, and power management systems.

With a typical forward voltage of 1.2 V and a gate charge of just 5.1 nC at Vgs, this component delivers efficient fast switching suitable for high-frequency applications. The maximum power dissipation rating of 900 milliwatts further demonstrates its capability in moderate power applications.

The compact physical dimensions of 3.04 mm length, 1.4 mm width, and 1.01 mm height facilitate integration into space-constrained designs. The package supports surface mounting to standard PCB boards.

This MOSFET supports gate-source voltages ranging between -20 V and +20 V, allowing versatile control methodologies. It complies with no specific automotive standards, indicating its general-purpose usage. Ideal for use in industrial electronics, power supplies, signal switching, and Discrete Semiconductor implementations.

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