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onsemi QFET N-Channel MOSFET, 850 mA, 200 V, Enhancement Mode, 4-Pin SOT-223 FQT4N20LTF

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onsemi QFET N-Channel MOSFET, 850 mA, 200 V, Enhancement Mode, 4-Pin SOT-223 FQT4N20LTF

Name: onsemi QFET N-Channel MOSFET, 850 mA, 200 V, Enhancement Mode, 4-Pin SOT-223 FQT4N20LTF
Brand: onsemi
SKU: 347535
Price: 0.53 USD
Availability: InStock

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Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.6mm
Length	6.5mm
Model	FQT4N20LTF
Width	3.56mm
Mount Type	Surface
Series	QFET
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	N
Maximum Continuous Drain Current Id	850mA
Maximum Drain Source Voltage Vds	200V
Maximum Drain Source Resistance Rds	1.35Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.2W
Typical Gate Charge Qg @ Vgs	4nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.5V

Key Features

This device operates in enhancement mode, providing efficient switching capabilities.
Typical gate charge is 4 nC at Vgs, allowing fast switching applications.
Maximum drain-source resistance Rds is 1.35 ohms, minimizing conduction losses.
Designed with a maximum power dissipation of 2.2 W and operating temperature up to 150°C.
The MOSFET package dimensions are compact with 6.5 mm length, 3.56 mm width, and 1.6 mm height.
Operating temperature range spans from -55°C to 150°C for diverse environmental conditions.
Mount type is surface mount with a 4-pin count facilitating easy PCB integration.
Maximum gate-source voltage tolerance is -20 V to +20 V ensuring protection in various circuits.

Product Description

onsemi FQT4N20LTF is a QFET® N-Channel MOSFET designed for efficient switching and power management in electronic circuits. The device supports a continuous drain current of 850 mA and withstands a drain-source voltage up to 200 V. Packaged in a 4-pin SOT-223 surface mount form factor, it is suitable for compact and space-constrained applications.

Utilizing enhancement mode technology, it delivers low on-state resistance, enhancing power efficiency by reducing conduction losses. With a typical gate charge of 4 nC at gate-source voltage, it enables rapid switching suitable for power supplies, DC-DC converters, and motion control systems.

This MOSFET supports a maximum power dissipation of 2.2 W and operates reliably in temperatures ranging from -55°C to 150°C. The robust maximum gate-source voltage rating of -20 V to +20 V adds circuit protection against voltage spikes.

Its compact physical dimensions (6.5 mm length, 3.56 mm width, and 1.6 mm height) combined with surface mount technology streamline PCB design and manufacturing processes. The device does not conform to specific automotive or other standards but serves well in general industrial, commercial, and consumer electronic products.

Typical applications include power supplies, power factor correction (PFC), DC-DC converters, plasma display panels, lighting ballasts, and motion control circuits, benefiting from reduced switching and conduction losses.

The package content includes one QFET N-Channel MOSFET device. Explore a wide range of MOSFETs and Discrete Semiconductors within the Electronics & Electricals category at EnvMart for advanced electronic component solutions.