Toshiba N-Channel MOSFET 400 mA 60 V Enhancement Mode 3-Pin SOT-23 T2N7002BK

Toshiba T2N7002BK N-Channel MOSFET is a Discrete Semiconductor device engineered for industrial, electronic component, and power management applications requiring efficient switching and low power loss.

This MOSFET features a maximum continuous drain current of 400 mA and a maximum drain-source voltage rating of 60 V, suitable for low power switching circuits. Housed in a compact SOT-23 package with 3 pins, it is designed for surface mounting on printed circuit boards (PCBs), enabling compact system design.

The device operates effectively over a wide temperature range of -55°C to 150°C, ensuring reliability in varied industrial and electronic environments. Its low on-resistance (Rds(on)) of approximately 1.05 Ω at a gate-source voltage of 10 V reduces conduction losses, optimizing device efficiency.

The enhancement mode channel and typical gate charge of 0.39 nC facilitate fast switching and ease of gate drive in electronic circuits. Manufactured in Thailand, the T2N7002BK complies with necessary semiconductor quality standards, although no specific automotive standards are met by this device.

Operates with a maximum continuous drain current of 400 mA. Maximum drain-source voltage rated at 60 V ensuring robust performance. Low drain-source on-resistance for efficient conduction. Compact SOT-23 surface mount package with 3 pins.

Wide operating temperature range from -55°C to 150°C. Maximum power dissipation capacity of 1 watt. Enhancement mode channel for improved switching. Maximum gate-source voltage of 20 V. Typical gate charge of 0.39 nC. Manufactured in Thailand.

This MOSFET is suitable for various industrial and electronic component applications including power management, consumer electronics, embedded systems, and other switching applications where compact size and efficient performance are critical.

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