Vishay N-Channel Enhancement MOSFET 17A 200V 3-Pin TO-263 IRL640SPBF

Vishay IRL640SPBF is a high-performance N-Channel enhancement mode MOSFET designed for power switching and amplification in electronic circuits. The device comes in a compact 3-pin TO-263 surface-mount package, making it suitable for integration into modern printed circuit boards.

With a maximum continuous drain current of 17 A and a drain-source voltage rating of 200 V, this MOSFET supports a wide range of low to medium power applications including power management, switching regulators, and motor control.

The transistor features a maximum drain source resistance of 180 milliohms, which contributes to improved conduction efficiency and reduced power loss during operation. The typical gate charge of 66 nC at specified gate voltage allows for fast switching capabilities, essential for high-frequency applications.

Rated for a maximum power dissipation of 3.1 W, and designed to operate reliably between -55°C and 150°C, the IRL640SPBF MOSFET ensures robust performance in industrial and consumer electronics environments.

The device has a forward voltage of 2 volts, which further helps in minimizing power loss during transistor conduction phases. The enhancement mode channel supports efficient and reliable operation with low gate-source voltage control.

Physically, the MOSFET measures 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height, and it is designed for surface-mount technology helping to streamline assembly processes in manufacturing.

This product does not carry automotive certification and is broadly applicable in general industrial, HVAC, manufacturing, consumer electronics, and laboratory equipment where power MOSFETs are required.

The device features a low maximum drain source resistance of 180 milliohms improving efficiency. Typical gate charge of 66 nanocoulombs at specified gate voltage ensures fast switching. Maximum power dissipation of 3.1 W supports moderate power handling requirements.

Operating temperature ranges from -55°C to 150°C for reliability in various conditions. Forward voltage drop of 2 V reduces conduction losses in switching applications. Enhanced N-channel MOSFET architecture enables improved performance for power switching.

Compact dimensions of 10.67 mm length, 9.65 mm width, and 4.83 mm height suit PCB mounting. Designed to meet standard commercial semiconductor requirements without automotive certification. Explore the Vishay MOSFET range and other semiconductor products at EnvMart for industrial, electronic, and prototyping solutions.

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