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onsemi N-Channel IGBT 80 A 600 V 3-Pin TO-3PF Through Hole FGAF40N60SMD
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Model | FGAF40N60SMD |
| Mount Type | Through Hole |
| Series | Field Stop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-3PF |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 115W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| onsemi FGA20N120FTDTU IGBT, 40 A 1200 V, 3-Pin TO-3PN, Through HoleBrand | onsemi |
Key Features
- This IGBT transistor supports a maximum continuous collector current of 80 amperes.
- Maximum collector emitter voltage rating is 600 volts for high voltage applications.
- It is housed in a TO-3PF package suitable for through hole mounting techniques.
- The device has a maximum power dissipation of 115 watts, enhancing performance under load.
- Operational temperature range extends from -55°C to 175°C, supporting demanding industrial environments.
- Maximum gate emitter voltage is 20 volts ensuring safe gate control limits.
- Designed for fast switching with a switching speed around 1 MHz.
- Pin count is 3, consistent with typical IGBT transistor configurations for control and load terminals.
Product Description
The onsemi FGAF40N60SMD is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for efficient switching and power amplification. Featuring a 3-pin TO-3PF package compatible with through hole mounting, this transistor supports a high collector current of up to 80 amperes and withstands voltage levels up to 600 volts. Its maximum power dissipation capability is 115 watts, making it suitable for various power electronic applications requiring robust performance.
Operable across a wide temperature range from -55°C to 175°C, the FGAF40N60SMD transistor is engineered to maintain reliability under demanding industrial conditions. The device's gate control is designed with a maximum gate emitter voltage of 20 volts, ensuring safe operation and efficient switching at frequencies up to 1 MHz. Its three-pin configuration facilitates standard connectivity for control and load terminals.
This device complies with RoHS standards, reflecting environmental considerations in semiconductor manufacturing. Typical use cases include high-efficiency switching in power inverters, motor drives, industrial control systems, and power supplies for manufacturing and automotive applications. The discrete transistor enables enhanced control in electronic circuits demanding fast switching with low saturation voltage and high current capacity.
Maximum continuous collector current of 80A. Maximum collector emitter voltage of 600V. Power dissipation up to 115W. 3-Pin TO-3PF package for through hole mount. Operating temperature range: -55°C to 175°C. Maximum gate emitter voltage of 20V.
Switching speed approximately 1 MHz. RoHS compliant.
This onsemi FGAF40N60SMD IGBT transistor is an excellent choice for industrial, electronic, manufacturing, and automotive power control applications. Browse similar IGBTs on EnvMart to find power semiconductors tailored to your design and efficiency requirements.
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Frequently Asked Questions
The maximum continuous collector current for this IGBT is 80 amperes.
This model has a maximum collector emitter voltage rating of 600 volts.
The maximum power dissipation capability of this IGBT is 115 watts.
The operational temperature range extends from -55°C to 175°C.
The maximum gate emitter voltage for this IGBT is 20 volts.
It is designed for fast switching with a switching speed of approximately 1 MHz.
This model is housed in a TO-3PF package suitable for through hole mounting techniques.
This IGBT has a pin count of 3, consistent with typical IGBT configurations.
Yes, this device complies with RoHS standards, reflecting environmental considerations in its manufacturing.
Typical use cases include high-efficiency switching in power inverters, motor drives, industrial control systems, and power supplies for manufacturing and automotive applications.
The maximum collector emitter saturation voltage for this IGBT is 1.9 volts.
The country of origin for this IGBT is India.
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