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onsemi QFET N-Channel MOSFET 8 A 900 V Enhancement 3-Pin TO-220 FQPF9N90CT
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.07mm |
| Length | 10.36mm |
| Model | FQPF9N90CT |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 1.4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 45nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- Capable of handling continuous drain current of 8 amperes.
- Maximum drain-source voltage rating of 900 volts supports high voltage applications.
- Featuring enhancement mode channel for efficient switching control.
- Low on-resistance of 1.4 ohms ensures reduced power losses.
- Maximum power dissipation of 68 watts provides robust thermal handling.
- Operating temperature range from -55°C up to 150°C supports diverse environments.
- Typical gate charge of 45 nanocoulombs offers quick switching performance.
- Supports maximum gate-source voltage from -30 V to +30 V.
Product Description
onsemi FQPF9N90CT is a QFET® N-Channel enhancement mode MOSFET designed for high efficiency in power management applications with 8 A continuous drain current and 900 V maximum drain-source voltage. Packaged in a 3-pin TO-220 through-hole form factor, this transistor provides excellent thermal and electrical performance with a maximum power dissipation of 68 W. It operates reliably within a range of -55°C to 150°C.
Its low on-resistance of 1.4 Ω contributes to reduced conduction losses, while the typical gate charge of 45 nC ensures swift switching capability. The device supports gate-source voltages from -30 V to +30 V, enhancing device robustness and control flexibility.
This MOSFET is engineered utilizing the advanced QFET® planar technology, delivering superior figures of merit over competitive planar MOSFETs, making it suitable for demanding industrial, commercial, and laboratory applications such as power supplies, power factor correction circuits, DC-DC converters, plasma display panels, lighting ballasts, and precision motion control systems.
The compact dimensions of the TO-220 package - 16.07 mm height, 10.36 mm length, and 4.9 mm width - facilitate integration into various electronic assemblies requiring through-hole mounting.
Handles continuous drain current up to 8 A. Maximum drain-source voltage rating of 900 V. Enhancement channel mode for efficient switching performance. Low on-state resistance at 1.4 Ω reduces power loss. Supports up to 68 W power dissipation.
Wide operating temperature range from -55°C to 150°C. Designed for high-performance power electronics applications. 3-pin TO-220 through-hole package enables convenient mounting. Gate charge and voltage ratings enable fast switching and device protection.
This onsemi MOSFET is ideal for industrial electronics, power management, automation, and HVAC control systems. Explore more high-quality semiconductors and power devices on EnvMart to enhance your project designs and operational efficiency.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 8 A.
It has a maximum drain-source voltage rating of 900 V, making it suitable for high voltage applications.
The on-resistance of this model is 1.4 ohms, which helps in reducing power losses during operation.
This MOSFET can handle a maximum power dissipation of 68 watts, providing robust thermal handling.
It operates reliably within a temperature range of -55°C to 150°C.
The typical gate charge for this MOSFET is 45 nanocoulombs, which contributes to its quick switching performance.
This model is packaged in a 3-pin TO-220 through-hole format, facilitating easy integration into electronic assemblies.
The dimensions of this MOSFET are 16.07 mm in height, 10.36 mm in length, and 4.9 mm in width.
It supports a maximum gate-source voltage of -30 V to +30 V, enhancing device robustness.
This MOSFET utilizes an N-channel type, which is designed for enhancement mode operation.
It is suitable for applications such as power supplies, power factor correction circuits, DC-DC converters, and precision motion control systems.
The country of origin for this product is India.
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